BJT Transistor Collector Current

In summary, a textbook equation for the collector current in a bjt transistor is not applicable in this context because the junctions have to be biased correctly. There is a lot missing from your simulations, which makes it difficult to understand the underlying physics.
  • #1
FAS1998
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I’ve attached an image below of a section from my textbook and some circuit simulations. The textbook gives an equation for the collector current in a bjt transistor. The simulation shows two circuits (with the same bjt transistor) that hav equal values for all variables present in the textbook equation. Shouldn’t the two circuits be producing the same collector current? Why are thy different in the simulation?
 

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  • #2
It looks like there is a lot missing from your simulations. Correct biasing of the transistors in the Common Emitter (CE) configuration, for one.

Are you familiar with how to bias an NPN BJT in the CE configuration?
 
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  • #3
berkeman said:
It looks like there is a lot missing from your simulations. Correct biasing of the transistors in the Common Emitter (CE) configuration, for one.

Are you familiar with how to bias an NPN BJT in the CE configuration?
No, I’m not quite sure what that means. I’m just beginning to learn how bjt transistors work and assumed that the textbook equation generally described how the collector current is related to the voltage between the base and emitter. Why is the equation not applicable in this context?
 
  • #4
Because the junctions have to be biased correctly in order for the equations to apply.

Have a look at this Wikipedia page to learn more. Does your textbook talk about biasing a CE amplifier?

https://en.wikipedia.org/wiki/Common_emitter
 
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  • #6
berkeman said:
Because the junctions have to be biased correctly in order for the equations to apply.

Have a look at this Wikipedia page to learn more. Does your textbook talk about biasing a CE amplifier?

https://en.wikipedia.org/wiki/Common_emitter
I’m not sure. Is this related to modes of operation? Does this equation maybe only work in the active mode when Vc > Vb > Ve? Most of the material preceding the equation is about modes of operation.
 
  • #7
FAS1998 said:
Does this equation maybe only work in the active mode when Vc > Vb > Ve?

That is the normal biasing for CE operation, so I would say yes. The equations for the other modes of operation (like CB, etc.) are likely similar, though. In your original simulation screenshots there was no biasing at all, or at best parasitic biasing from the base current you were forcing into the base.

Have you been able to set up a better biased simulation based on the Google Images results yet?
 
  • #8
FAS1998 said:
Shouldn’t the two circuits be producing the same collector current? Why are thy different in the simulation?
The diagrams assume saturation, not bias as a CE amplifier.
The second diagram has a 1k collector load.
 
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  • #9
FAS1998 said:
Does this equation maybe only work in the active mode when Vc > Vb > Ve? Most of the material preceding the equation is about modes of operation.
Yes - the shown exponential relationship between Ic and Vbe applies only if Vc>Vb.
Therefore, you need an additional voltage source of some volts biasing the collector.
For the second circuit (with a collector resistance), this voltage must be large enough to cope for the voltage drop acrooss this resistor (caused by the expected collector current).

By the way: Who told you to bias the base with a voltage of 1V ? Instead, take 0.6...0.7 V only.
 
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  • #10
Here is another good source. Look at the collector curves about half way down.
https://www.electronics-tutorials.ws/transistor/tran_2.html
 
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1. What is the BJT transistor collector current?

The BJT transistor collector current refers to the flow of electric charge carriers (electrons or holes) through the collector terminal of a bipolar junction transistor (BJT). It is one of the three main currents in a BJT, along with the base and emitter currents, and is typically denoted as IC.

2. How is the BJT transistor collector current calculated?

The BJT transistor collector current can be calculated using Ohm's Law, where IC = VCC / RC, where VCC is the collector supply voltage and RC is the collector load resistance. It can also be calculated using the BJT's characteristic curves, which show the relationship between collector current and collector-emitter voltage for a given base current.

3. What factors affect the BJT transistor collector current?

The BJT transistor collector current is affected by several factors, including the base current, collector-emitter voltage, temperature, and the characteristics of the transistor itself (such as its gain and saturation current). The collector load resistance also plays a role in determining the collector current.

4. How does the BJT transistor collector current vary with temperature?

The BJT transistor collector current is directly proportional to temperature, meaning that as temperature increases, the collector current also increases. This is due to the increase in thermal energy, which allows more charge carriers to flow through the transistor.

5. What is the maximum collector current that a BJT transistor can handle?

The maximum collector current that a BJT transistor can handle is determined by its maximum collector current rating, which is specified by the manufacturer. Exceeding this rating can cause the transistor to overheat and potentially fail. It is important to choose a transistor with a collector current rating that is appropriate for the intended application.

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