Cause and effect confusion, BJT

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Discussion Overview

The discussion revolves around the operation of a BJT (Bipolar Junction Transistor) and the relationships between base current (Ib), collector current (Ic), and the voltage across the collector-emitter junction (Vce). Participants explore the implications of these relationships in various configurations and conditions, addressing both theoretical and practical aspects of transistor behavior.

Discussion Character

  • Exploratory
  • Technical explanation
  • Debate/contested

Main Points Raised

  • Some participants assert that Ic = β * Ib is a fundamental relationship, but it is conditional on the collector current being within certain limits imposed by the circuit, specifically Vcc/Rc.
  • There is a discussion about whether Ib causes Ic or if Ib can exist without Ic, with some arguing that Ib allows Ic to occur when there is a sufficient Vcc.
  • One participant mentions that it is possible to have a base current without a collector current if the collector is left open, indicating that the base-emitter diode can conduct independently.
  • Another point raised is that Vce is influenced by the supply voltage Vcc and the voltage drop across Rc, which leads to varying Vce when a signal is applied.
  • Some participants emphasize the importance of understanding the operating mode of the BJT, noting that equations may not apply in all scenarios, particularly when the collector is forward biased.
  • There is a suggestion that the emitter current (Ie) is a more critical parameter to consider than Ic, especially in the context of circuit design and stability.

Areas of Agreement / Disagreement

Participants express differing views on the relationships between Ib, Ic, and Vce, indicating that multiple competing perspectives exist. There is no consensus on the starting point of the process or the implications of varying parameters in different configurations.

Contextual Notes

Participants highlight the importance of understanding the operating region of the BJT and the effects of circuit components like Rc and Re. Some discussions reference specific conditions that may alter the applicability of standard equations, such as saturation or forward biasing.

Who May Find This Useful

This discussion may be useful for individuals studying transistor operation, circuit design, or those interested in the nuances of BJT behavior in various configurations.

shippo113
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Lets take a simple BJR transistor having an Rc.
The Ic = beta*Ib, of course. But Ic=(Vcc-Vce)/Rc as well right?
Now the confusion, does Ib cause Ic or is Ib possible without Ic (and thus no Vcc)? If we have Vcc and thus Vce than we shall have Ic thus we can have Ib=Ic/beta? What causes Vce, is it Ib or Ic. The books don't go into these other perspectives. I can see the equations and that is what is making me confused.

I am confused, where does the process start from...

Why does Vce vary when we put in a signal?
 
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shippo113 said:
Lets take a simple BJR transistor having an Rc.
The Ic = beta*Ib, of course. But Ic=(Vcc-Vce)/Rc as well right?
This is only true if the emitter is grounded

Now the confusion, does Ib cause Ic or is Ib possible without Ic (and thus no Vcc)?
yes, Ib cause Ic, but Ib is possible without Ic. If you leave collector open, you can still get Ib if you forward bias the base emitter diode.

If we have Vcc and thus Vce than we shall have Ic thus we can have Ib=Ic/beta? What causes Vce, is it Ib or Ic. The books don't go into these other perspectives. I can see the equations and that is what is making me confused.

I am confused, where does the process start from...

Why does Vce vary when we put in a signal?

You need to read about what region the BJT is working in. In linear circuit, the BJT work in forward reverse mode where the base collector diode is reverse biased and the base emitter diode is forward biased.

You should not look at the collector voltage alone, more importantly, it's the emitter current that set up collector current. When you forward bias the base emitter diode and reverse bias the base collector diode, and if you assume beta is very high, the collector current is very close to the emitter current. Usually people put a resistor Re between the emitter to ground. For NPN, the emitter is about 0.7V below the base voltage you put on it when it is forward biased. you setup the emitter current by biasing the base and the Ie= (Vb-0.7)/Re. If the base collector diode is reverse biased, the Ic≈Ie.

You work on Ie, not Ic.
 
Yes, you can have a base current without a collector current.

You could leave the collector wire disconnected and pass a current through the base emitter diode.

(If fact, if you reverse the voltage, the base emitter diode of some transistors behaves like a Zener diode with a breakdown of about 8 volts.)

Now if you apply a collector voltage of more than a volt or so, the collector current will depend on the base current. Doing this has almost no effect on the base current.

If you vary the base current, the collector current, (which is much bigger than the base current) varies in proportion to the size of the base current.

If there is a collector resistor, this varying collector current causes a varying voltage across the collector resistor. This voltage is the output voltage of the amplifier.
 
Ic = β x Ib is the basic relationship between base and collector current. Rc will impose boundary condition on the maximum collector current. Ic = β x Ib will be true up to the point where Ic is less or equal Vcc/Rc. If you increase base current further collector current will not change. So, Ic = β x Ib ≤ Vcc / Rc.
 
Let's take a simple BJR transistor having an Rc.
BJR transistor? maybe BJT(adjacent key) ?
Rc being external to transistor i guess you meant, between collector and supply?

The Ic = beta*Ib, of course. But Ic=(Vcc-Vce)/Rc as well right?
Yes of course.

Now the confusion, does Ib cause Ic or is Ib possible without Ic (and thus no Vcc)?
I would say Ib ALLOWS Ic so long as there's a Vcc to pull the current out of the collector(or push it in whichever you prefer)
If we have Vcc and thus Vce than we shall have Ic thus we can have Ib=Ic/beta? What causes Vce, is it Ib or Ic...

Vce is caused by supply, Vcc. Vce is how much supply is left after the Rc takes away its share.

Sorry i sometimes get literal. Used to hang out with English teachers.
But i remember struggling with these concepts myself - i hope this helps.
Not to suggest other answers were not complete or good - just i find if several approaches are offered usually one of them will help make another one click .
That's Synergy.

old jim
 
I really think looking only at the few equation is too simplistic. I think it is more important to first identify the mode where the BJT is operating in first and foremost. As everyone know, if the Rc is too big, the collector can go into forward bias and all bets are off. OP has to really learn about the forward reverse bias thingy before even talk about the equations.

Cases where collector is open, forward biased ( saturated) is totally different and non of the equation really matter.

For basic understanding of forward reverse biaing, it is the Ie that matter, everything start with the Ie. In this rough approximation, just assume β is very high and Ic≈Ie. All the design is to control Ie, and Ic just follow.

In real life design, we avoid controlling Ic by Ib all together. Instead we use Re ( emitter resistor) to degenerate and stabilize the drift of the transistor. This is too long to explain and I think everyone is trying to answer a specific point here. Get a good basic book like

https://www.amazon.com/Electronic-Principles-Albert-Malvino/dp/0028028333/ref=sr_1_1?ie=UTF8&qid=1342652479&sr=8-1&keywords=malvino+electronic+principles

This book really explain how to design BJT circuits in a very simplistic way and it work. It is easy to understand, I read it like story books and I use the concept to even design IC in my job before.
 
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