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Hello,
I read a derivation for the width of the depletion region W in "SEMICONDUCTOR DEVICE FUNDAMENTALS" by Robert F. Pierret in which at one point it says:
http://imageshack.com/i/ipbgKsK9p
Here again for better readability:
x_N = \sqrt{\frac{2 K_S \epsilon_0}{q}\frac{N_A}{N_D\cdot(N_A+N_D)}V_{bi}}
x_P = \sqrt{\frac{2 K_S \epsilon_0}{q}\frac{N_D}{N_A\cdot(N_A+N_D)}V_{bi}}
W = x_N + x_P = \sqrt{\frac{2 K_S \epsilon_0}{q}\frac{N_D+N_A}{N_A\cdot N_D}V_{bi}}
Which is confusing to me as I would expect the same containing:
W = x_N + x_P = \sqrt{\frac{2 K_S \epsilon_0}{q}\frac{N_D^2+N_A^2}{N_A\cdot N_D\cdot(N_A+N_D)}V_{bi}}This same outcome though is found on various places in the internet.
Does anyone know what I am missing?
Kind regards,
Name
Symbols:
x_N length of n-doped region
x_P length of p-doped region
N_Adensity of acceptors
N_Ddensity of donors
V_{bi} builtin potential
All the others are known constants
I read a derivation for the width of the depletion region W in "SEMICONDUCTOR DEVICE FUNDAMENTALS" by Robert F. Pierret in which at one point it says:
http://imageshack.com/i/ipbgKsK9p
Here again for better readability:
x_N = \sqrt{\frac{2 K_S \epsilon_0}{q}\frac{N_A}{N_D\cdot(N_A+N_D)}V_{bi}}
x_P = \sqrt{\frac{2 K_S \epsilon_0}{q}\frac{N_D}{N_A\cdot(N_A+N_D)}V_{bi}}
W = x_N + x_P = \sqrt{\frac{2 K_S \epsilon_0}{q}\frac{N_D+N_A}{N_A\cdot N_D}V_{bi}}
Which is confusing to me as I would expect the same containing:
W = x_N + x_P = \sqrt{\frac{2 K_S \epsilon_0}{q}\frac{N_D^2+N_A^2}{N_A\cdot N_D\cdot(N_A+N_D)}V_{bi}}This same outcome though is found on various places in the internet.
Does anyone know what I am missing?
Kind regards,
Name
Symbols:
x_N length of n-doped region
x_P length of p-doped region
N_Adensity of acceptors
N_Ddensity of donors
V_{bi} builtin potential
All the others are known constants
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