Difference between the movement of oxygen ions and vacancies

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The movement of oxygen ions and oxygen vacancies in solid oxides differs primarily in their concentration and diffusion mechanisms. Oxygen ions typically have a higher concentration than oxygen vacancies, which are less prevalent. Additionally, oxygen ions can diffuse through various mechanisms, including interstitial diffusion, while vacancies primarily rely on vacancy-mediated diffusion. Consequently, the diffusion coefficients for oxygen ions and vacancies are not the same. Understanding these differences is crucial for applications in materials science and solid-state physics.
Seeker87
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Hi,

I am confused about the difference (if there is any?) between the movement of oxygen ions and oxygen vacancies inside the solid oxides. In some literature I find they are taking about the movement of negatively charged oxygen ions inside the metal oxides, while in some other cases it is positively charged oxygen vacancies that move.

Is this the same thing? In crystals I imagine the oxygen vacancy as the vacancy of the lattice oxygen atom (for example in the case of SiO2 the missing oxygen atom between the two silicon atoms). Now the oxygen vacancy is a virtual particle and in reality it is always oxygen that moves. So is there any difference between the two (movement of oxygen vacancies and oxygen ions) in terms of mobility or similar?

Thanks a lot!
 
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Seeker87 said:
. So is there any difference between the two (movement of oxygen vacancies and oxygen ions) in terms of mobility or similar?

First the concentration of vacancies is usually less than the concentration of oxide ions. Second the oxide ion can diffuse by other mechanisms other than the vacancy (interstitial for example). Because of this the diffusion coefficient of both the ion and the vacancy are different.
 
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