Fabricating PIN Diode with Boron, Si and Phosphorus

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The discussion focuses on the fabrication of a PIN diode using boron, silicon, and phosphorus, detailing the doping process and the creation of contacts on a silicon wafer. The author has measured the I-V characteristics of the diode but lacks a formula or reference for comparison. They seek assistance in finding the appropriate formula to validate their measurements. The inquiry highlights a need for guidance in analyzing the electrical properties of their fabricated device. Overall, the thread emphasizes the challenges faced in characterizing a newly fabricated PIN diode.
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Hii...

I already fabricated PIN diode using boron (P), Si (N-type), and phosphorus (N). For the method, I etching two contact at Si wafer then doping the boron and phosphorus... there are width I-region (Si) between the contact.

A already measured the I-V characteristic of PIN diode but don't have any formula or reference for compare with the measurement. I want know the formula to prove my IV Characteristic PIN diode. help me...??


Picture my fabricated PIN diode :

http://1.bp.blogspot.com/_cyXmnum7K...AAASE/wP1YD3xEjJg/s1600/PIN+diode+2+copy.jpg"
 
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