Help finding some specific elements for infrared (IR) sensor

AI Thread Summary
The discussion centers on the search for specific infrared (IR) sensor elements, including Thermopile, Pyroelectric, Bolometer, and MCT (HgCdTe), PbSe, or InSb sensors. The user outlines detailed specifications for multiple sensor arrays, such as pixel pitch, sensing wavelength, output type, and various performance parameters. They seek information on manufacturers that can provide these elements to meet the outlined criteria. The request emphasizes the need for precise technical specifications to ensure compatibility with their project. The user expresses frustration with generic FAQs and seeks direct assistance from the community.
Su-Te Tsai
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Dear Everyone,

I'm searching for some specific elements for infrared (IR) sensor, such as Thermopile, Pyroelectric, Bolometer, MCT(HgCdTe), PbSe, or InSb sensors.

Does anyone know how to get these kinds of elements ?
( I need some information about the manufacturers...)

The elements are required to match the specifications(a. to e.) as follows:

1. Thermopile array #1:

a. Pixel pitch: 0.6 mm
b. Array type: 2 x 4 or 4 x 4
c. Sensing wavelength: 8 ~ 14 um
d. Output type: analog for every element
e. Element parameter:
i. Element size: 0.5 mm x 0.5 mm
ii. Sensitivity: 60V/W for 8~14u
iii. Resistance: 80kΩ
iv. Noise: 36 nV/√Hz
v. D*: 0.9 x 108 for 1Hz
vi. Time constant: < 6ms

2. Thermopile array #2:
a. Pixel pitch: 1.1 mm
b. Array type: 2 x 2
c. Sensing wavelength: 8 ~ 14 um
d. Output type: analog for every element
e. Element parameter:
i. Element size: 1 mm x 1 mm
ii. Sensitivity: 50V/W for 8~14um
iii. Resistance: 80kΩ
iv. Noise: 36 nV/√Hz
v. D*: 1.3 x 108 for 1Hz
vi. Time constant: < 10ms

3. Pyroelectric array:
a. Pixel pitch: 1.1 mm
b. Array type: 2 x 2
c. Sensing wavelength: 8 ~ 14 um
d. Amplifier: with integrated voltage mode amplifier (ex. FET), every element
e. Operate frequency: 1Hz ~ 5kHz
f. Output type: analog for every element
g. Element parameter:
i. Element size: 1 mm x 1 mm
ii. Sensitivity: 120V/W for 1kHz and 8~14um
iii. Output impedance: ~100kΩ
iv. NEP: 3.8 x 10-10W/√Hz
v. D*: 2.5 x 108 for 1kHz
vi. Time constant: < 25ms

4. Bolometer array:
a. Pixel pitch: 0.3 mm
b. Array type: 8 x 8
c. Sensing wavelength: 8 ~ 14 um
d. Operate frequency: 1Hz ~ 5kHz
e. Output type: analog for every element
f. Element parameter:
i. Element size: 0.25 mm x 0.25 mm
ii. Sensitivity(before readout gain, 2V, 0Hz): 100,000V/W
iii. NETD(f/1, 300K, 30Hz): < 10mK
iv. D*: 8 x 108
v. Time constant: < 15ms

5. MCT(HgCdTe) or PbSe or InSb:
a. Sensor type: one element
b. Sensing wavelength: 3 ~ 5 um(cut-off λ= 4.9 ~ 6 um)
c. Element parameter:
i. Element size: 0.5 mm x 0.5 mm or 1 mm x 1 mm
ii. D*: 8 x 108
iii. Cooling: None or Built-in TEC type (Up to two TEC)

Thank you so much !Su-Te, Tasi.
 
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