High Drift Velocities in Silicon vs Metals: Explained

In summary, a high drift velocity in silicon refers to the speed at which electrons move through the material, and is generally lower compared to metals due to silicon's higher resistivity and lower carrier concentration. It can be caused by impurities, defects, and doping, and has applications in electronic devices such as transistors and diodes. However, there may be disadvantages such as electron scattering and heat generation.
  • #1
Depasquale97
4
0

Homework Statement


Explain why the drift velocity of electrons in silicon are relatively high when compared to drift velocities of electrons in metals of the same size, when the same current flows through both.

Homework Equations

The Attempt at a Solution


I stated that the number of charge carrier per unit volume in the case of conductors is n=1028m-3 and the one for the semi-conductor is n=1016m-3.
 
Physics news on Phys.org
  • #2
... OK. So how is that related to the drift velocity?
 

Related to High Drift Velocities in Silicon vs Metals: Explained

1. What is a high drift velocity in silicon?

A high drift velocity in silicon refers to the speed at which electrons move through the material when subjected to an electric field. It is a measure of how quickly the electrons can carry a charge or current.

2. How does the drift velocity in silicon compare to that of metals?

The drift velocity in silicon is generally lower than that of metals. This is because silicon has a higher resistivity and a lower carrier concentration compared to metals, which can result in slower movement of electrons.

3. What causes high drift velocities in silicon?

High drift velocities in silicon can be caused by the presence of impurities, defects, and doping in the material. These factors can affect the mobility of electrons and increase their speed when subjected to an electric field.

4. What are the applications of high drift velocities in silicon?

High drift velocities in silicon are particularly useful in electronic devices such as transistors and diodes, where fast and efficient movement of electrons is necessary. They are also important in the development of high-speed and high-frequency integrated circuits.

5. Are there any disadvantages to high drift velocities in silicon?

One potential disadvantage of high drift velocities in silicon is the increased likelihood of electron scattering, which can cause loss of energy and affect the overall performance of electronic devices. Additionally, high drift velocities can result in heat generation, which can be detrimental to the longevity of the device.

Similar threads

  • Introductory Physics Homework Help
Replies
6
Views
11K
  • Special and General Relativity
Replies
4
Views
367
  • Introductory Physics Homework Help
Replies
19
Views
4K
  • Introductory Physics Homework Help
Replies
6
Views
2K
Replies
11
Views
1K
  • Introductory Physics Homework Help
Replies
1
Views
2K
  • Introductory Physics Homework Help
Replies
2
Views
503
  • Introductory Physics Homework Help
Replies
4
Views
8K
  • Introductory Physics Homework Help
Replies
13
Views
2K
  • Introductory Physics Homework Help
Replies
5
Views
2K
Back
Top