How to determine unCoxW/L value of a MOSFET?

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Discussion Overview

The discussion revolves around determining the unCoxW/L value of a MOSFET, which is essential for using the MOSFET as a voltage-controlled resistor. Participants explore whether this value is available in datasheets or if it varies among different MOSFETs. The conversation includes theoretical and practical considerations regarding the use of MOSFETs in applications.

Discussion Character

  • Technical explanation
  • Conceptual clarification
  • Debate/contested

Main Points Raised

  • One participant inquires about the availability of the unCoxW/L value in datasheets and whether it is consistent across different MOSFETs.
  • Another participant explains that W/L, electron mobility (µn), and oxide capacitance (Cox) are technology-dependent and that the unCoxW/L value varies among MOSFETs.
  • It is suggested that transconductance values can be found in datasheets and that a SPICE model may provide the k-value needed for calculations.
  • A participant emphasizes the importance of practical experience over textbook equations when working with discrete semiconductors, noting that vendors may not provide the unCoxW/L value explicitly.
  • The original poster expresses concern about the necessity of the k-value in their calculations and wonders if it can be omitted in their application.

Areas of Agreement / Disagreement

Participants generally agree that the unCoxW/L value is not consistently provided by manufacturers and that it varies among different MOSFETs. However, there is no consensus on the necessity of this value for practical applications, as some suggest it may not be required while others imply it is important for accurate calculations.

Contextual Notes

Participants note that the determination of the unCoxW/L value depends on various factors, including the specific MOSFET technology and the context of its application. There is also mention of the limitations of relying solely on theoretical equations in practical scenarios.

atlbraves49
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So I'm going to be using a MOSFET as a voltage controlled resistor, but to do so,i need to know the value of the unCoxW/L, also known as k

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is that something that's on datasheets? or is it generally the same for all MOSFETs?

(this is the mosfet i plan on using..)
http://www.irf.com/product-info/datasheets/data/irf630npbf.pdf

thanks,
 
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- W/L are the geometrical channel width and length of the MOSFET, this is strongly dependent on the type of MOSFET
- µn is the electron (in case of nMOS) mobility in the channel, this is technology dependent
- COX is the oxide capacitance per unit area, it is determined from \epsilon0\epsilons/dox. dox is the thickness of the oxide (isolator); this number is also technology dependent

thus, µnCoxW/L value is in general different for different MOSFETS

Typically you will find various transconductances (given in siemens, S or A/V) in datasheets, you should select the proper one to calculate the drain current for a given gate voltage at a given drain voltage.
Or (what seems even better) try to find on the Int-Rect-website a spice-model for the MOSFET you are planning to use, the k-value you are looking for should be visible inside the model file.
 
hi atlbraves49, what is your background? Is this an academic project or one for work? I've only been working in the industry less than 2 years, so I may have my foot in my mouth when I say this. When dealing with discrete semiconductors, you shouldn't design or rely too much on the equations derived in textbooks. They are the foundations to understand how semiconductors work. But when it comes to practice you will hardly find too many vendors listing what \mu_n C_{ox}\frac{W}{L} is for their products. You need to determine a way to bias the gate of your FET to adjust the drain-source resistance to match what you want.
 
Corneo said:
hi atlbraves49, what is your background? Is this an academic project or one for work? I've only been working in the industry less than 2 years, so I may have my foot in my mouth when I say this. When dealing with discrete semiconductors, you shouldn't design or rely too much on the equations derived in textbooks. They are the foundations to understand how semiconductors work. But when it comes to practice you will hardly find too many vendors listing what \mu_n C_{ox}\frac{W}{L} is for their products. You need to determine a way to bias the gate of your FET to adjust the drain-source resistance to match what you want.

Im a student and this is an academic project.

See that's what we were planning on doing (biasing the gate), but isn't the K value still included in that?

VDS/ID = 1 / [K(VGS-Vt)]

?

because if i somehow don't need that K value, that would make my day =O
 

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