Intrinsic Concentrations are different in some books. Why?

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Intrinsic carrier concentration values for silicon vary across different sources, with some citing 1.1x10^10 cm^-3 and others 1.5x10^10 cm^-3. The discrepancies may stem from differing experimental methods and theoretical models used in calculations. A referenced paper by Sproul, Green, and Zhao suggests that the commonly accepted value of 1.45x10^10 cm^-3 is outdated and proposes a new value of 1.08x10^10 cm^-3 based on improved measurements. Their latest findings report an intrinsic concentration of 1.01x10^10 cm^-3, highlighting a significant advancement in accuracy. Understanding these variations is crucial for accurate semiconductor modeling and applications.
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Homework Statement
Solid State Physics
Relevant Equations
Intrinsic Concentration
instinct concentration temperature relationship formula?
in some books, Si instrinct concentration(ni)=1,1x10^10cm-3, some books instrinct concentration(ni)=1,5x10^10cm-3. Why these values are different?
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Maybe, this paper might be of help:
A. B. Sproul, M. A. Green, and J. Zhao, Improved value for the silicon intrinsic carrier concentration at 300 K , Appl. Phys. Lett. 57, 255 (1990)

Abstract

A recent review suggests that the commonly cited value of 1.45×1010 cm−3 for the silicon intrinsic carrier concentration at 300 K is inconsistent with the best experimental and theoretical results. An alternative value of 1.08×1010 cm−3 was suggested. A new experimental measurement of 1.01×1010 cm−3 is reported with an estimated one standard deviation uncertainty of only 3%. This appears to be the most accurate experimental determination of this parameter at any temperature.
 
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