Discussion Overview
The discussion revolves around a problem related to non-uniformly distributed p-n junctions, specifically focusing on a diffused silicon p-n junction with a linearly graded junction on the p side. Participants are attempting to determine the total depletion width, built-in potential, and maximum electric field at zero bias, while addressing the challenges in solving the problem.
Discussion Character
- Homework-related
- Technical explanation
- Exploratory
Main Points Raised
- The original poster describes a p-n junction problem involving a linearly graded junction on the p side and uniform doping on the n side, seeking assistance in solving for various parameters.
- Some participants inquire about the methods attempted by the original poster and whether the problem was sourced from a textbook, emphasizing the need for the slope of the gradient to solve the problem.
- The original poster mentions that the gradient is given as the parameter 'a' and shares their attempts at solving the built-in potential, expressing uncertainty about their approach.
- One participant critiques the original poster's images, indicating that while the third image appears to follow the correct approach, they have not verified the calculations or constants used.
- There is a suggestion that the charge density should include a linear dependency and that integrating charge is necessary to derive the electric field and built-in potential.
Areas of Agreement / Disagreement
Participants do not reach a consensus on the correctness of the original poster's approach, and there is uncertainty regarding the calculations and methods used. Multiple viewpoints on how to proceed with the problem are expressed.
Contextual Notes
Participants note the importance of the gradient's slope and the potential need for additional mathematical steps to fully resolve the problem. Some assumptions regarding the integration and charge density modifications are mentioned but not fully explored.
