Devin-M
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Could you comment on the graph on this webpage… I might be misinterpreting it but I believe graph (a) shows a particular detector which is at 300k (~80F) operating temperature generating current from mid-infrared light up to 4000 nanometers with zero bias, which I take to mean the detector is operating in photovoltaic mode with no outside voltage applied…Drakkith said:My understanding is that it's the thermal motion of the electrons in the sensor that leads to the generation of dark current, not IR radiation. A single IR photon doesn't have enough energy to cause an electron to jump the energy gap, but a lucky collision/interaction between several electrons/ions can give an electron enough energy to jump the gap and into the area of the pixel well that stores the photoelectrons prior to readout.
No. Prior to exposure the pixel wells undergo a charge separation process that puts them in a high-energy state. Photons, or random interactions from thermal motion, cause electrons to jump an energy gap and get caught in this charged well. Given enough time or photons the well becomes completely saturated and can no longer collect charge. You won't extract more energy out of this than it took to separate the charges in the first place.
A solar panel operates somewhat differently and I don't really know enough to explain it well. However, I do believe that the solar panel needs to be at a lower temperature than the emitting object it is capturing radiation from. Besides, the solar panel itself and the surrounding environment is a temperature reservoir, so there's more than one.
https://www.researchgate.net/figure/a-g-The-spectral-responsivity-measured-at-zero-bias-ie-photovoltaic-mode-for-the_fig3_346511011
“(a)-(g) The spectral responsivity measured at zero bias (i.e. photovoltaic mode) for the Te-hyperdoped Si photodetector at different temperatures. The room-temperature spectral responsivity of a commercial Si-PIN photodiode (model: BPW34) is included as a reference (brown short dot). (h) Illustration of the below-bandgap photoresponse in the Te-hyperdoped Si photodetector. Te dopants introduce deep-level states (intermediate band) inside the Si band gap, which facilitate the absorption of photons with sub-bandgap energies. Process I: VB to CB (Eph ≥ Eg); Process II: VB to IB (Eph ≥ Eg-ETe); Process III: IB to CB (Eph ≥ ETe, only measurable at low temperatures where the thermal contribution is neglected).”