Probability of Quantum Tunneling

AI Thread Summary
The discussion centers on calculating the oxide thickness in a metal-oxide-semiconductor device to achieve a 5% tunneling probability for electrons under a 30 V applied voltage. The user initially applies the wrong equations for tunneling probability, confusing the wavefunction for electrons inside the barrier with the actual tunneling probability. The correct approach involves understanding the potential shape and using the Fowler-Nordheim tunneling model, which accounts for defects in real gate oxides. The user expresses uncertainty about the electron energy and seeks clarification on the correct values to use in their calculations. Overall, the conversation highlights the complexities of quantum tunneling in semiconductor devices and the importance of using appropriate models and equations.
Minhty
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Homework Statement


I am given a metal-oxide-semiconductor device. I apply a positive voltage (30 V) on to the metal. Theoretically, the electrons should tunnel through the oxide. I want to calculate the oxide thickness for only 5% of electrons tunneling through the oxide.

Homework Equations



I used the equations from here:
http://hyperphysics.phy-astr.gsu.edu/hbase/quantum/barr.html

where ψ=e-αx
α = √(2m(U-E))/[STRIKE]h[/STRIKE]

Also, I thought the probability of electrons tunneling is:
|ψ|2 = e-2αx

The Attempt at a Solution



So I thought that E is electron energy and E≈kT, but my professor told me that it isn't true and didn't explain to me what it is, so I don't know what the electron energy is anymore.

Also, I thought U is the applied voltage. I made the voltage into energy by the equation: voltage = energy/charge so 30 V become 30eV

I don't know if I'm doing this right or if I'm putting the wrong numbers in the wrong place. Any advice is appreciated! Thanks!
 
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Unfortunately you’re not using the right equations at the moment. The wavefunction you have is for electrons inside the barrier, so you are calculating the electron density a distance x inside the barrier rather than the tunnelling probability. Moreover, the shape of the potential in your problem is different from that website –*can you see why?

Do you have any notes from lectures or your textbook that look more relevant to this situation?
 
I'm sorry but I don't have resources that is relevant to the situation.
 
I can't help with the math/physics other than to say that when measuring gate oxide breakdown characteristics it was always referred to as Fowler-Nordheim tunneling. Real gate oxides would have defects and be worn out by tunneling? so the practical figure for gate oxide thickness is probably higher than the theoretical. I hope that offers some help, part of my motivation for commenting on an area I can rightly profess ignorance in is to see what the answer actually is.
 
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