Semiconductor: Cz Crystal Growth

AI Thread Summary
The discussion revolves around calculating the usable fraction (X) of a silicon boule produced through the Czochralski growth process, given specific doping concentrations. The key equation used is C_s = kC_0(1-X)^(k-1), where the challenge lies in converting the maximum solid concentration (C_s_max) into a unitless ratio for accurate calculations. Participants debated whether to use solid or liquid densities to determine the initial melt concentration (C_0), ultimately leaning towards liquid densities for precision. There was also an acknowledgment of previous algebraic errors in isolating C_s_max. The conversation highlights the complexities of semiconductor doping and the importance of accurate density values in calculations.
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Homework Statement



A Czochralski growth process is begun by inserting 1000 moles of pure silicon and 0.01
mole of pure arsenic in a crucible. For this boule, the maximum permissible doping
concentration is 1018 cm-3. What fraction (X) of the boule is usable? (k=0.3)

Homework Equations



C_{s}=kC_{0}(1-X)^{(k-1)}

Where C_{s} is the concentration in the solid, k is the segregation coefficient {C_s}/{C_l}, C_0 is the initial doping concentration in the melt, and X is the fraction of the boule that is solidified.


The Attempt at a Solution



In our case, k<1, so C_s increases as X increases.
I am trying to find X when C_{s}_{max}=10^{18}cm^{-3}

C_{s}_{max}=kC_{0}(1-X_{max})^{(k-1)}

\frac{C_{s}_{max}}{kC_{0}}=(1-X_{max})^{(k-1)}

\left(\frac{C_{s}_{max}}{kC_{0}}\right)^{(1-k)}=(1-X_{max})

X_{max}=1-\left(\frac{C_{s}_{max}}{kC_{0}}\right)^{(1-k)}

From here on out it's plug-n-play with my one show-stopper: I am given C_{0} as a molar ratio (unitless), and C_{s}_{max} as a volume ratio (#/cm^3). I need my final answer to be unitless. How do I convert C_{s}_{max} to a unitless ratio? I'd play with density, but I don't know either the pressure or temperature at which this process is being carried out.

Thanks!

~Malka
 
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Never mind: Csmax is a value for the solid crystal, so I just used densities and molar masses of solid silicon and arsenic to get C0 in units of cm-3.

Also, to correct a mistake in last post: I made an algebra error while isolating Csmax.

The second-to-last equation should read
\left(\frac{C_{s}_{max}}{kC_{0}}\right)^{\frac{1}{k-1}}=(1-X_{max})

and similarly for the last equation.
 
In order to calculate C_0, do you think we should use solid densities or liquid densities? C_0 is the initial melt concentration.

You are right about the fact that pressure and temperature of the process are not given. But I think using liquid densities will yield more accurate result.

Thanks for taking the initiative to discuss the problem.

Regards

Hasib
 
Yes, but from my understanding, melts are generally made by putting solid components into a crucible and then heating them until they melt (and perhaps a bit beyond).
But I hear what you are saying, that C0 is supposed to describe a liquid.
Perhaps for most accurate results, we should convert Csmax, which is for a solid, into a molar ratio.
 
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