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Semiconductors(solid state physics)

  1. Apr 29, 2009 #1
    1. The problem statement, all variables and given/known data

    The Fermi level lies 0.516 ev below the conduction band in a sample of silicon at
    300 degrees K.

    2. Relevant equations

    majority carrier concentration for n-type
    n = 1/2[(Nd -Na) + sqrt((Nd-Na)^2 + 4(ni^2)]

    minority carrier concentration for n-type
    p= ni^2/Nd-Na

    where Nd = density of donor atoms
    Na = density of acceptor atoms


    3. The attempt at a solution

    My question is how do I calculate or find out what Na and Nd are?
     
  2. jcsd
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