Short-Channel Effect": Detailed Explanations in Books & Papers

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The discussion focuses on identifying books and papers that clearly explain the "short-channel effect." Participants recommend looking into GaAs FETs and modern FET theory for detailed insights. A classic text by Sze and Ng is highlighted as a valuable resource for understanding these concepts. The importance of device scaling in MOSFETs is emphasized, particularly regarding maintaining electric field levels in gate oxides. Overall, the conversation underscores the need for specialized literature to grasp the complexities of short-channel effects.
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Which books or papers explain "short-channel effect" very clearly and detailedly?

Either books or papers are OK!

Thanks!
 
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xhwubai said:
Either books or papers are OK!

Thanks!

I copy a few pages in pdf, hope you can open it because I have problem shrinking down to small enough file. You might have to wait for a day for moderator to approve. Hope this will help.
 

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Thank you very much! Any more?
 


xhwubai said:
Thank you very much! Any more?

Not from me anymore! I study this for very short time. I thought it explained pretty well but what do I know, I am not specialized in this field, I just study it for my interest once few years back.

Look into GaAs FETs and other modern FETs theory, that is where short channel stuff is.
 


yungman said:
Not from me anymore! I study this for very short time. I thought it explained pretty well but what do I know, I am not specialized in this field, I just study it for my interest once few years back.

Look into GaAs FETs and other modern FETs theory, that is where short channel stuff is.

Thanks a lot! could you tell the name and author of the book you uploaded?
 


There is a classic text by Sze and Ng which will give you an overview of these things.

When you want to know about short-channel effects, a good place to start is device scaling.

Let's say, in a MOSFET, you want to scale a device, but keep the same electric field in the gate oxide. Well, to accomplish this, one has to decrease the channel doping, which in turn makes your source and drain depletion lengths longer, which is sort of the root of short channel effects.

In your reading, you will find reasons for wanting to keep the same electric field in the oxide. From there, you can understand why Intel and people are always looking for exotic gate materials, like the presently-used Hafnium oxide.

Good luck!
 


seang said:
There is a classic text by Sze and Ng which will give you an overview of these things.

When you want to know about short-channel effects, a good place to start is device scaling.

Let's say, in a MOSFET, you want to scale a device, but keep the same electric field in the gate oxide. Well, to accomplish this, one has to decrease the channel doping, which in turn makes your source and drain depletion lengths longer, which is sort of the root of short channel effects.

In your reading, you will find reasons for wanting to keep the same electric field in the oxide. From there, you can understand why Intel and people are always looking for exotic gate materials, like the presently-used Hafnium oxide.

Good luck!

Thanks a million!
 
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