Nugatory said:
BTW - the more you tell us about why you're building this model in the first place, the better the answers you'll get.
Thanks for your reply. I have previously started a thread in which I listed all my information, assumptions and approximations and received no answers at all. I thought it best to start small.
So, I am trying to model the relationship between current and compressive strain in Quantum Tunnelling Composites. The component is effectively a capacitor with the difference being the dielectrics resistance decreases exponentially as a compressive strain is applied. This is because 'filler particles', effectively large electron traps, are compressed closer together, decreasing the width of the potential barrier.
My current approximations are:
The filler particles are randomly oriented enough so that I can model a perfect three dimensional array in which each electron travels from trap to trap in a straight line with no more or less optimal paths existing.
The compressive strain on the elastomer is equal to the strain on the average distance between the traps in the array. That is, the strain is perfectly distributed.
The barrier height will be a function of the repelling force on an electron by the elastomer molecules between it and the next trap. I assume that this is a large oversimplification but it is after all a simple model.
The barrier width will be a function of the number of elastomer molecules between two traps and the average width of an elastomer molecule.
The electrons which successively tunnel all the way through do so with no loss in velocity and no time spent 'stationary' in any traps.