What Does It Mean When the Fermi Level is in the Band Gap?

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Discussion Overview

The discussion revolves around the concept of the Fermi level in semiconductors, particularly when it is said to lie within the band gap. Participants explore the implications of this positioning, the definitions of the Fermi level and chemical potential, and the relationship between the Fermi-Dirac distribution and crystal structure.

Discussion Character

  • Exploratory
  • Technical explanation
  • Conceptual clarification
  • Debate/contested

Main Points Raised

  • Some participants question the meaning of the Fermi level being in the band gap, suggesting it implies the maximum energy of an electron is in the forbidden zone.
  • Others argue that the definition of the Fermi level is crucial; if defined as the energy of the highest occupied state, it would sit at the bottom of the gap, while the chemical potential lies in the middle.
  • There is a discussion about the Fermi-Dirac distribution, with some noting that it describes the occupation of energy levels but does not account for the underlying crystal potential.
  • One participant emphasizes that the thermal distribution depends on energy alone, which raises questions about its validity in all scenarios.
  • Another participant mentions that at finite temperatures, the Fermi level as defined by the highest occupied state becomes less clear due to the probability of occupancy of all states.
  • Concerns are raised about the implications of adding an electron to a semiconductor and how this relates to the chemical potential.
  • One participant states that the Fermi level indicates equal concentrations of electrons in the conduction band and holes in the valence band at absolute zero temperature.

Areas of Agreement / Disagreement

Participants express differing views on the definition and implications of the Fermi level, with no consensus reached on its meaning when it lies within the band gap. The discussion remains unresolved regarding the relationship between the Fermi level, chemical potential, and the implications for semiconductor behavior.

Contextual Notes

Participants acknowledge that definitions of the Fermi level can vary, and the implications of these definitions may depend on the context, such as temperature effects and the nature of the system being considered.

nista
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hello to everyone. It is normally said that in semiconductors the Fermi level is half way between the valence and the conduction band. I have the following question on that: what does it mean that the Fermi level is in the band gap? It should mean that the maximum energy of an electron in the solid is in the forbidden zone?
And moreover: How can Fermi-Dirac distribution tell us the occupation number of a state when it does not even take into account the underlying crystal potential?
I have a lot of confusion on this point.
Thanks to all
 
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The notion of a Fermi level doesn't really make sense when the Fermi level would lie inside a gap. Better yet, it just depends on how you define the Fermi level. If your definition is the energy of the highest occupied state then the Fermi level would sit at the bottom of the gap by definition. This is clearly not the definition being used when one says the Fermi level lies in the middle of the gap.

In fact, what does lie in the middle of the gap is the chemical potential, and because the chemical potential of a free gas of electrons is equal to its Fermi level as traditionally defined, one says that the Fermi level of the semiconductor considered is at the center of the gap. However, let me emphasize again that it really just depends on how you define the Fermi level.

If one redefines the Fermi level from "energy of highest occupied state" to "chemical potential" then the Fermi level will lie in the gap in the semiconductor case considered and the Fermi level will sit at the energy of the highest occupied state in the free gas in agreement with the more familiar definition.

As an aside, the Fermi level as defined by the energy of the highest occupied state doesn't quite work at finite temperature because all states have at least some tiny probability of being occupied. This is related to the familiar statement that the Fermi surface of a metal gets blurred on the scale of T (temp) at finite T. Of course, the difference between a mathematically sharp zero temperature Fermi surface and one blurred by temperature effects can be a minor one from a physical point of view.

This may be going to far, but in an interacting Fermi liquid the Fermi energy is also not equal to the energy of the highest occupied state even at zero temperature. Instead, the Fermi energy is defined in terms of a discontinuity in momentum space occupation.
 
The Fermi-Dirac function gives you the distribution for any fermionic energy level. You should think of it just as a consequence of thermal equilibrium (which is why its so universal). But you're quite right, the crystal structure must enter somehow. The crystal structure enters by telling you what energies to put into the Fermi function. In other words, the crystal structure determines the energy levels and the density of states, and the Fermi function tells you how these levels are occupied.

I do want to emphasize that you're right to be suspicious, the fact that the thermal distribution (Fermi function) depends only on the energy (and not on the momentum, for example) is a non-trivial statement. It comes from assumptions about the nature of thermal equilibrium and need not always be true. Nevertheless, for most applications you are safe using the standard rule.
 
Physics Monkey said:
The notion of a Fermi level doesn't really make sense when the Fermi level would lie inside a gap. Better yet, it just depends on how you define the Fermi level. If your definition is the energy of the highest occupied state then the Fermi level would sit at the bottom of the gap by definition. This is clearly not the definition being used when one says the Fermi level lies in the middle of the gap.

In fact, what does lie in the middle of the gap is the chemical potential, and because the chemical potential of a free gas of electrons is equal to its Fermi level as traditionally defined, one says that the Fermi level of the semiconductor considered is at the center of the gap. However, let me emphasize again that it really just depends on how you define the Fermi level.

If one redefines the Fermi level from "energy of highest occupied state" to "chemical potential" then the Fermi level will lie in the gap in the semiconductor case considered and the Fermi level will sit at the energy of the highest occupied state in the free gas in agreement with the more familiar definition.

As an aside, the Fermi level as defined by the energy of the highest occupied state doesn't quite work at finite temperature because all states have at least some tiny probability of being occupied. This is related to the familiar statement that the Fermi surface of a metal gets blurred on the scale of T (temp) at finite T. Of course, the difference between a mathematically sharp zero temperature Fermi surface and one blurred by temperature effects can be a minor one from a physical point of view.

This may be going to far, but in an interacting Fermi liquid the Fermi energy is also not equal to the energy of the highest occupied state even at zero temperature. Instead, the Fermi energy is defined in terms of a discontinuity in momentum space occupation.

Ok this is MUCH more clear to me on general grounds, thank you a lot, really. But, if I think about the chemical potential I have in mind that it is the energy required to add or remove a particle from the system. Now I have a further question: what does it mean to add an electron to a semiconductor? Does it mean to add a delocalized charge to the system? And how does that matches to the fact that the energy cost should be equal to our precise value of the chemical potential? Thanks a lot for your patience
 
nista said:
Ok this is MUCH more clear to me on general grounds, thank you a lot, really. But, if I think about the chemical potential I have in mind that it is the energy required to add or remove a particle from the system. Now I have a further question: what does it mean to add an electron to a semiconductor? Does it mean to add a delocalized charge to the system? And how does that matches to the fact that the energy cost should be equal to our precise value of the chemical potential? Thanks a lot for your patience

Sorry, I quote myself but it is just to say that I have found an article that explains many of my doubts related to this subject. To whoever is also interested this article is American Journal of Physics -- May 2004 -- Volume 72, Issue 5, pp. 676-678
 
the fermi level in the midst of valancy band and conduction band indicates equal concentrations of electrons in conduction band and holes in valancy band.And at "0" kelvin the electrons reach upto that level only and they can't exceed it.
 

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