Why Does Id Increase with Constant Vgs Despite Body Effect?

AI Thread Summary
In the discussion, it is clarified that for an NMOS transistor, increasing the source-to-body voltage (Vsb) raises the threshold voltage (Vt) due to the body effect. Despite the initial assumption that drain current (Id) would increase with constant gate-to-source voltage (Vgs), it is argued that Id should actually decrease because it is proportional to (Vgs - Vt)². The reasoning is that as Vsb increases, Vt rises, potentially leading to a situation where Vt exceeds Vgs, resulting in Id becoming zero. This confirms that increasing Vsb reduces Id when Vgs is held constant. The conclusion emphasizes the importance of understanding the relationship between Vsb, Vt, and Id in NMOS operation.
salil87
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I found on my notes that for an NMOS with increase in Vsb voltage Body Effect increases, Vt also increases. But it is mentioned that with Vgs constant id increases which I feel is wrong since id is proportional to (Vgs - Vt)2. Hence I think id should decrease. Please show me the light :-)

Thanks
Salil
 
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I think your notes are wrong. I would also expect Id to decrease with increasing Vsb for a fixed Vgs and assuming the transistor is limiting factor for the drain current.
 
Actually, I just thought of a quick way of mentally verifying this. Since Vgs is fixed, you can solve for the Vsb to make Vth above Vgs. This would make Id zero as the FET would be off. Since you can always increase Vsb to make Id=0 by increasing Vth for any fixed Vgs (in the mathematical model anyway) you should conclude increasing Vsb reduces Id.
 
Great... thnks a lot for the confirmation :-)
 
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