Does Collector Current Depend on Base-Collector Voltage in Common Base BJTs?

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In a common base BJT configuration, the collector current (Ic) is primarily determined by the base-emitter voltage (Vbe) according to the Shockley equation: Ic=Is[exp(Vbe/VT) -1]. While some sources suggest that Ic is influenced by the base current (Ib) through the relation Ic=B*Ib, this does not accurately reflect the cause-and-effect relationship. There is a minor dependency of Ic on the collector-base voltage (Vcb), which is illustrated by the Early effect, indicating a finite slope in the Ic versus Vce characteristics. Overall, the fundamental behavior of a BJT remains consistent across different configurations, emphasizing Vbe as the main control factor for Ic. Understanding these dynamics is crucial for accurate BJT application and design.
Aditya Mysore
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Does the collector current in a transistor depend on the base-collector voltage in a common base configuration? If so,how does it depend mathematically?
 
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The principle behaviour of a BJT does not depend on the specific configuration (common emitter, base or collector).
In any case, the famous Shockley equation applies: Ic=Is[exp(Vbe/VT) -1].
Hence, the collector current always is determined and controlled by the base-emitter voltage only.
I am aware that in some textbooks and other publications (in particular: Internet) it is stated that Ic would be controlled by Ib because of the relation Ic=B*Ib.
This relation holds, of course, and it is often used for designing simple transistor stages - however, it does not tell anything about cause and effect.
There are many properties and effects to be observed in BJT applications that can be explained ONLY with the above mentioned equation Ic=f(Vbe).
(I would not be surprised if this reply would cause some disagreements from other forum members; I have corresponding experiences.).
 
LvW said:
The principle behaviour of a BJT does not depend on the specific configuration (common emitter, base or collector).
In any case, the famous Shockley equation applies: Ic=Is[exp(Vbe/VT) -1].
Hence, the collector current always is determined and controlled by the base-emitter voltage only.
I am aware that in some textbooks and other publications (in particular: Internet) it is stated that Ic would be controlled by Ib because of the relation Ic=B*Ib.
This relation holds, of course, and it is often used for designing simple transistor stages - however, it does not tell anything about cause and effect.
There are many properties and effects to be observed in BJT applications that can be explained ONLY with the above mentioned equation Ic=f(Vbe).
(I would not be surprised if this reply would cause some disagreements from other forum members; I have corresponding experiences.).
Thanks. Can you also explain physically why it does not depend on the voltage of the other junction?
 
Aditya Mysore said:
Thanks. Can you also explain physically why it does not depend on the voltage of the other junction?

It depends! (I assume the question is if Ic depends, correct?).
The collector current is mainly determined by the base-emitter voltage - however, there is also a small dependency on the collector-base voltage (backward biased).
This dependency is visualized by the "Early voltage" which is a measure of the BJT`s output conductance (finite slope of the Ic=f(Vce) characteristics).
 

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