Calculating Semiconductor Resistance

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To calculate the resistance of an intrinsic silicon bar at 300 K, one must first determine its conductivity, which relies on the mobility of electrons and holes. Doping the silicon with 10^15 donors will increase its conductivity, thereby reducing resistance, while doping with 10^15 acceptors will also affect conductivity but in a different manner. The relationship between doping concentration and conductivity is crucial for these calculations. The necessary mobility values can typically be found in the appendix of semiconductor textbooks. Understanding these principles is essential for accurately determining the resistance changes due to doping.
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Hello All;
This is a question I found in semiconductors and devices by Kanaan Kano.

Basically, the volume of a bar of Silicon is given at 300 K [1x0.01x0.2 cm]. How would you find the resistance of the bar if it is intrinsic.

Also, what will be the new resistance after doping of 10^15 donors. What about doping of 10^15 Acceptors ?
 
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The resistance of the bar depends on the conductivity. And the conductivity depends on the doping concentration. So first find the conductivity. You need mobility of both electrons and holes for this. See if you can find this in text's appendix
 
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