The discussion revolves around the behavior of a reverse-biased PN junction diode, specifically addressing the flow of current and the role of charge carriers in this scenario.
Participants are actively engaging with the question, with some providing insights into the nature of reverse current and the behavior of charge carriers. There is a recognition of the complexity of the topic, and while some understanding is emerging, explicit consensus has not been reached.
The discussion includes references to external resources for further reading, indicating a collaborative effort to clarify the concepts involved. The original poster's question reflects a common area of confusion regarding semiconductor behavior under reverse bias.
Ty mate, but that doesn't answer the question why since on one side a large +charge from the donor ions is building , why it just not pull some of the electrons from the acceptor ions into the N regionCWatters said:
I get it now, thank you for ur answers:-)CWatters said:There is some reverse current but it's very small because it's the minority carriers involved. For example in the P-type material the majority charge carriers are holes. It's better to think of electrons that are injected from the -ve as reducing the number of holes available making it less conductive, rather than being free electrons able to go across the barrier.
https://en.wikipedia.org/wiki/Reverse_leakage_current