High-frequency semiconductor devices typically operate in the GHz range and are often made from III-V compound semiconductors like GaAs and InP, which allow for higher electron mobility compared to silicon. Common types of high-frequency devices include high-electron mobility transistors (HEMT) and heterojunction bipolar transistors (HBT). The distinction between low and high-frequency devices also involves circuit modeling, with low-frequency devices typically using lumped circuit models and high-frequency devices employing distributed circuit models. The gain-bandwidth product is a key parameter in determining a transistor's frequency capabilities, with a frequency like fT = 300 MHz indicating its upper limit for effective amplification. Understanding these concepts is crucial for proper circuit design and functionality at high frequencies.