How to Calculate Ton for SiC IGBT Power Devices?

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Calculating Ton for SiC IGBT power devices involves understanding the turn-on voltage and the associated losses. To find Ton, one must consider the voltage used to turn on the gate, as a higher voltage reduces the voltage seen by the junction. The junction curves in the datasheet provide necessary volt/amp characteristics to calculate power losses, which equal the voltage drop across the collector-emitter multiplied by the gate current. It may be necessary to iterate calculations to achieve the desired accuracy. Proper analysis of the circuit load is essential for determining the actual current flow and subsequent losses in the transistor.
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In power device, there will be losses.. my device is SiC IGBT.

i know how to find Toff = toff + tf base on datesheet..
but i don't know how to find Ton = doff +tr.

http://ixapps.ixys.com/DataSheet/DS100140A_IXGH48N60B3C1.pdf

can someone guide me along..
 
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Read the data sheet and determine what the voltage that you will use to turn on the gate, the larger the voltage, the less voltage is actually seen by the junction across the collector to the emitter is when the device is on. This voltage needs to be determined, then read the voltage from the junction curves to determine the volt/amp curve. Power losses equal the voltage drop across the CE multiplied by the current flow through the gate. Your actual circuit load will determine the current flow which will then be used to determine your loss in the transistor.

You may have to iterate your circuit one or two cycles ie crunch the numbers one or two times to approach the accuracy you need.
 
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