An increase in numerical aperture (NA) is generally associated with improved resolution and a decrease in minimum line width. However, confusion arises when considering the relationship between NA and the illuminated area, as higher NA can lead to a larger exposed area on the substrate, potentially increasing the minimum line width. The discussion clarifies that minimum line width refers to the smallest feature size that can be reliably imaged in semiconductor fabrication. The participants emphasize the importance of understanding these definitions to reconcile the apparent contradiction between theoretical formulas and practical outcomes. Ultimately, clarity on these concepts is essential for accurate application in semiconductor lithography.