IRF3000 Minimum and Maximum Voltage

Click For Summary

Discussion Overview

The discussion centers around the maximum and minimum voltage specifications for the IRF3000 MOSFET, particularly focusing on the drain pin voltage and its implications for circuit design. Participants explore the datasheet information and its application in a specific scenario involving a 220VDC supply and a 50KHz PWM signal.

Discussion Character

  • Technical explanation
  • Debate/contested

Main Points Raised

  • One participant questions whether the VDSS value of 300V represents the maximum or minimum voltage at the drain pin, suggesting it is the maximum based on the characteristic curve.
  • Another participant confirms that 300V is the maximum breakdown voltage and emphasizes the need to design with this specification in mind.
  • Concerns are raised about the input capacitance of 730 pF and its impact on PWM signal integrity at different frequencies, with a suggestion to consider reducing the PWM frequency for better performance.
  • A participant references an application note that discusses driving IG FETs, indicating that dedicated chips may be necessary for higher frequency operations due to increased losses.
  • Another participant clarifies that the maximum stand-off voltage condition occurs when both the gate and source are at 0V, resulting in a specified current from drain to source.

Areas of Agreement / Disagreement

Participants generally agree that 300V is the maximum breakdown voltage, but there is uncertainty regarding the implications of this specification for the proposed circuit design. Multiple viewpoints on the PWM frequency and driving methods remain unresolved.

Contextual Notes

Participants note the importance of considering the input capacitance and its reactance at different frequencies, which may affect the performance of the MOSFET in the intended application. The discussion does not resolve the implications of these factors on the overall circuit design.

legendary_
Messages
8
Reaction score
0
Greetings!

I am actually confused on what is the maximum and minimum voltage at the drain pin of IRF3000 MOSFET. Here is the datasheet: http://www.datasheetcatalog.org/datasheet/irf/irf3000.pdf

Here is what the datasheet says: VDSS = 300V

I wonder if this is the maximum or minimum voltage. I guess this is the maximum voltage because the characteristic curve shows Vds from 0 to 100 but I am not sure if it is correct.

Specifically, I wanted to connect a 220VDC in series with the drain terminal of IRF3000; and a 50KHz PWM signal on the gate. I wonder if this is possible with this device.

Please help. Thanks.
 
Engineering news on Phys.org
Yes, further down the page it shows 300 V as the maximum breakdown voltage.

The meaning is that all devices will have a breakdown voltage of at least this, although you might be lucky and get a device that is better than this.
So, you have to design with this in mind.

You will notice that these devices have a large input capacitance of 730 pF. This will have a reactance of 4.3 K ohms at 50 KHz, but to maintain a PWM square wave into this capacitance, you would have to consider the effect of this 730 pF at around 1 MHz where it would have a reactance of 218 ohms.

I guess this would be possible, but it would be easier if you could reduce the frequency of the PWM input.
 
On the second page, it give you the spec. That is the condition where the gate is at 0V. In another word, both gate and source are shorted at 0V. At that voltage, there will be 250uA current from drain to source.

It is the maximum stand off voltage in the given condition.
 

Similar threads

  • · Replies 5 ·
Replies
5
Views
2K
Replies
2
Views
2K
Replies
10
Views
5K
  • · Replies 1 ·
Replies
1
Views
2K
Replies
39
Views
6K
Replies
80
Views
5K
  • · Replies 10 ·
Replies
10
Views
3K
Replies
18
Views
6K
  • · Replies 11 ·
Replies
11
Views
7K
  • · Replies 11 ·
Replies
11
Views
3K