Discussion Overview
The discussion centers around issues with a MOSFET (IRLB3034) not functioning correctly when driven by a PWM signal from a Picaxe microcontroller. Participants explore the thermal performance of the MOSFET under different gate voltage conditions, the implications of switching frequency, and potential circuit modifications to improve performance.
Discussion Character
- Technical explanation
- Debate/contested
- Exploratory
Main Points Raised
- One participant describes the setup involving a Picaxe microcontroller and an IRLB3034 MOSFET, noting that the MOSFET overheats when driven by a 5V PWM signal.
- Another participant suggests checking the rise and fall times of the gate signal, indicating that slow transitions may keep the MOSFET in the linear region too long, causing overheating.
- There is a proposal to use a resistor to limit current to the gate, as excessive current could lead to unwanted heating.
- A participant mentions the importance of sharing a schematic to clarify the circuit design and facilitate troubleshooting.
- Discussion includes the measurement of gate voltage and the observation that the MOSFET operates correctly when directly connected to 8V, raising questions about the adequacy of the 5V signal.
- One participant calculates the RC time constant for the gate capacitance and suggests either using a low impedance driver or lowering the switching frequency to mitigate overheating.
- Another participant emphasizes the need to ensure the output is not in open-drain mode, which could affect performance.
- There are references to the MOSFET datasheet, with discussions about the gate voltage required for optimal operation and the implications of using a 5V signal for high current applications.
- Some participants express uncertainty about the adequacy of the gate voltage and suggest that a higher voltage may be necessary for proper MOSFET operation.
- One participant proposes using a 555 timer IC as a buffer to drive the MOSFET gate more effectively, while others discuss the potential need for a series gate resistor to prevent oscillation.
Areas of Agreement / Disagreement
Participants express various viewpoints on the cause of the overheating issue, with no consensus reached on a single solution. Multiple competing ideas regarding circuit modifications and the adequacy of the gate drive signal are presented.
Contextual Notes
Participants note limitations in their understanding of the MOSFET operation and the specifics of the circuit design, including the need for a proper schematic and the potential for counterfeit components affecting performance.
Who May Find This Useful
Individuals working with MOSFETs in PWM applications, particularly those using microcontrollers for switching high currents, may find the discussion relevant.