- #1
Corneo
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If we have a N-type Silicon [itex]N_d = 10^{16}[/itex]. If the sample has impurities which give rise to 10^10 recombination levels. Then carrier lifetime is now 100ns. Is the resistance different from when there are no impurities?
My guess is no since charge carrier concentration will stay constant, thus resistance is still the same whether there are impurities or not. How would I go about proving this though?
Thanks.
My guess is no since charge carrier concentration will stay constant, thus resistance is still the same whether there are impurities or not. How would I go about proving this though?
Thanks.