If we have a N-type Silicon [itex]N_d = 10^{16}[/itex]. If the sample has impurities which give rise to 10^10 recombination levels. Then carrier lifetime is now 100ns. Is the resistance different from when there are no impurities?(adsbygoogle = window.adsbygoogle || []).push({});

My guess is no since charge carrier concentration will stay constant, thus resistance is still the same whether there are impurities or not. How would I go about proving this though?

Thanks.

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# Homework Help: Resistance of sample

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