Reverse breakdown voltage is the voltage at which a diode or other semiconductor device begins to conduct electricity in the reverse direction, typically at a high current level. It is an important characteristic of these devices and is often included in their specifications.
Reverse breakdown voltage can be measured using a voltage-current curve, also known as an IV curve. This involves gradually increasing the voltage in the reverse direction while measuring the resulting current. The point at which the current suddenly increases is the reverse breakdown voltage.
Reverse breakdown voltage is important because it indicates the maximum voltage that a diode or other semiconductor device can withstand in the reverse direction before it begins to conduct. This is crucial for ensuring the proper functioning and reliability of electronic circuits.
If the reverse breakdown voltage of a diode or other semiconductor device is exceeded, it can lead to a breakdown in the circuit and cause damage or malfunction. Therefore, it is important to choose components with appropriate reverse breakdown voltage ratings for the specific circuit requirements.
The reverse breakdown voltage of a diode is a characteristic of its design and cannot be changed. However, it can be affected by external factors such as temperature, so it is important to consider the operating conditions when selecting a diode with a specific reverse breakdown voltage rating.