Hello, I am looking to use capacitance and voltage calculations to calculate the thickness of a thin oxide of a MOS capacitor. Here is what I think I should do: 1. grow poly on oxide on silicon 2. hook up substrate to ground and poly to a potential using a voltage source. 3. Use an LCR meter to measure capacitance. -Do this for different voltages from -5V to 5V (or voltage ranging from accumulation to depletion to inversion), with small steps in between. 4. Generate a C/V graph and calculate the thickness using small-signal capacitance and voltage equations pertinent to MOS capacitors. Is this a correct way to measure a thin oxide thickness? What changes can I make to make this procedure better? How thick should the poly be?