Galium Nitride (GaN) is identified as an ionic compound formed from gallium and nitrogen. The discussion begins with the electron arrangement of the nitrogen ion, which is crucial for understanding the compound's formation. Gallium, with three valence electrons, forms three positive ions (Ga³⁺), while nitrogen, to achieve stability, gains three electrons, resulting in a nitrogen ion with a charge of 3- (N³⁻). The electronic configuration of a free nitrogen atom is 1s² 2s² 2p³, indicating that it has five valence electrons and requires three additional electrons to complete its octet, thus forming the N³⁻ ion. The ion pairs involved in GaN are Ga³⁺ and N³⁻, which combine to create the stable ionic compound.