Who can tell me the microscopic mechanics of electric polarition of Si3N4

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Si3N4, primarily a covalently bonded amorphous material, exhibits dielectric properties that have been extensively studied since the 1970s, particularly for its potential as a gate dielectric in electronics. Its relative permittivity is approximately 7.8, which is higher than that of SiO2, making it attractive for applications in MOSFETs and nanotube-based FETs. The microscopic structure involves electronic polarization when subjected to an electric field. The molecule is primarily formed through covalent bonds rather than ionic bonds. Overall, Si3N4's unique properties continue to drive research and interest in semiconductor applications.
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Si3N4 is an amorphous.What's the microscopic structure of it and Which type of polarization is involved when it is presented in an Electric field(Eletronic polarization,orientational polarization,Atomic ploraization or some others)?Is there any theories to calculate the permittivity of Si3Ni4
By the way, I want to know if the molecule of Si3N4 combined by ionic bonds or atomic bonds?Thank you!
 
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Silicon nitride is a mostly covalently bonded molecule (hence the amorphousness). Under certain deposition conditions, however, it may possibly take on crystal characteristics similar to the substrate (but I'm not sure about this).

The dielectric properties of Si3N4 are pretty well known. It has been studied since the 70s as a possible gate dielectric. It has a relative permittivity (dielectric constant) of 7.8, which is greater than that of SiO2. It has recently regained the interest of fabrication folk for possible use in MOSFETs and more easily in nanotube-based FETs.

1. B Swaroop et al J. Phys. D: Appl. Phys. 3 803-806 (1970)

2. S Li, Z Yu, P Burke J. Vac. Sci. Technol. B 22(6) 3112 - 3114 (2004)
 
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