Difference between large signal and small signal models

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Large signal models and small signal models in BJTs serve different purposes in circuit analysis. The large signal model, often used for DC analysis, treats the base-to-emitter junction as a diode with a fixed voltage drop, typically around 0.6V, and is essential for biasing calculations. In contrast, the small signal model linearizes the circuit around a bias point, allowing for simplified calculations of gain at small AC signals, where the signal size is significantly smaller than the DC bias. In this context, VBE represents the DC voltage, while vbe denotes the small AC signal variation. Understanding these distinctions is crucial for effective problem-solving in BJT circuit design.
shawrix
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Please can someone explain the clear concept between large signal model and small signal models in BJT.
Please explain what to assume in large signal and small signals problem solving wise and also the concept.

Amongst vBE, VBE, vbe which is large signal?, small signal? and what we assume in the two models of BJT.

My go:

Is vBE = VBE in large signal model, or is vBE=vbe in small signal model? why do we neglect VBE?

Whats the purpose of two models? Also is BJT at DC equivalent to large signal model?[i know its dumb but you see i need all things cleared]
 
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As you'd expect - the difference is in the signal size.
Consider the case: ##v(t)=V_1+V_2\sin\omega t##

The signal is the ##V_2\sin\omega t## part and it's "size" is ##V_2##.
If ##V_1>>V_2## then you can use the small signal model.

This situation, the voltage ##v(t)\simeq V_1## is approximately DC.

It is useful because it makes the math simple.
 
I did a small post about this not so long ago:
What is small signal AC analysis?

Usually you go through some material on linearization of nonlinear systems before discussing small-signal analysis.
 
shawrix said:
Please can someone explain the clear concept between large signal model and small signal models in BJT.
Please explain what to assume in large signal and small signals problem solving wise and also the concept.

Amongst vBE, VBE, vbe which is large signal?, small signal? and what we assume in the two models of BJT.

My go:

Is vBE = VBE in large signal model, or is vBE=vbe in small signal model? why do we neglect VBE?

Whats the purpose of two models? Also is BJT at DC equivalent to large signal model?[i know its dumb but you see i need all things cleared]
In the small-signal model, the base-to-emitter path is represented by a resistance (of value 0.026β/IE or similar). In the large-signal or DC model, the base-to-emitter path is represented as a diode junction, and this often simply approximated as a fixed voltage drop of about 0.6v. It's the large-signal model that is used to calculate biasing. The small-signal model (available in various complexities) is then used for calculations of gain at frequencies of interest.
 
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