SUMMARY
The discussion centers on calculating molecular flux from a deposition rate of Silicon dioxide (SiO2) at 1000 Å/minute. The user initially attempted to apply ideal gas theory but found it unsuitable due to SiO2's non-ideal behavior, leading to incorrect results. The correct molecular flux is established as 3.8E15 molecules/cm² per second. The deposition process involves evaporation using an electron gun (e-gun) in ultra-high vacuum (UHV) conditions of approximately 10-9 Torr.
PREREQUISITES
- Understanding of molecular flux calculations
- Knowledge of deposition techniques, specifically e-gun evaporation
- Familiarity with ultra-high vacuum (UHV) systems
- Basic principles of gas behavior and limitations of ideal gas theory
NEXT STEPS
- Research molecular flux calculation methods in non-ideal gases
- Study the principles of e-gun evaporation and its applications
- Explore ultra-high vacuum (UHV) technology and its significance in material deposition
- Learn about the effects of deposition rate on thin film properties
USEFUL FOR
Materials scientists, physicists, and engineers involved in thin film deposition and surface science, particularly those working with Silicon dioxide and related materials.