Calculating moleculalar flux from deposition rate.

AI Thread Summary
To calculate the molecular flux of Silicon dioxide from a deposition rate of 1000 Å/minute, ideal gas theory is not applicable due to SiO2's non-ideal behavior. The correct molecular flux is approximately 3.8E15 molecules/cm² per second. The deposition process involves evaporation using an electron gun in ultra-high vacuum conditions of around 10^-9 Torr. Understanding the relationship between deposition rate and molecular flux is crucial for determining flux ratios. Accurate calculations are essential for effective material deposition in thin film applications.
Ravian
Messages
40
Reaction score
0
I have deposition rate of Silicon dioxide as 1000A/minute. I need to calculate molecular flux to the surface. First I tried to use ideal gas theory but since SiO2 is not ideal gas therefore my answer was completely wrong. I am disoriented. Can anybody help. I know the answer is 3.8E15 molecules/cm2 second.
Thanks

PS: It is not homework assignment. I need to calculate it to determine flux ratio.
 
Physics news on Phys.org
What is the process for deposition?
 
It is evaporated using e-gun in UHV of around 10-9 Torr.
 
Thread 'Motional EMF in Faraday disc, co-rotating magnet axial mean flux'
So here is the motional EMF formula. Now I understand the standard Faraday paradox that an axis symmetric field source (like a speaker motor ring magnet) has a magnetic field that is frame invariant under rotation around axis of symmetry. The field is static whether you rotate the magnet or not. So far so good. What puzzles me is this , there is a term average magnetic flux or "azimuthal mean" , this term describes the average magnetic field through the area swept by the rotating Faraday...

Similar threads

Back
Top