SUMMARY
The discussion centers on the presence of leakage current in NAND gates when connected to a pull-up resistor. Specifically, it confirms that when one NAND gate has a high-high (HH) input and another has a low-low (LL) input, leakage current does occur at the LL input state gate. This conclusion is supported by the information found in the relevant datasheet, which explicitly states the existence of leakage current in such configurations.
PREREQUISITES
- Understanding of digital logic gates, specifically NAND gates
- Knowledge of circuit design involving pull-up resistors
- Familiarity with leakage current concepts in semiconductor devices
- Ability to interpret electronic component datasheets
NEXT STEPS
- Research the impact of leakage current on NAND gate performance
- Study circuit design techniques for minimizing leakage current
- Explore datasheet analysis for various semiconductor components
- Learn about pull-up resistor configurations in digital circuits
USEFUL FOR
Electrical engineers, circuit designers, and students studying digital electronics who are interested in understanding the effects of leakage current in NAND gate configurations.