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Given a linearly graded on-junction with the following doping conditions a=10^21

I have to calculate Emax, Vbi, W and the junction capacitance with Va=0.2V and Vr=-5V

This is for Silicon @ T=300k

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From what I understand, I have to use an iterative method but I don't think I'm getting the correct answer.

I'm using this equationVbi=Vt*ln((a*Xo)/(ni))^2

Vt=0.0259

ni=1.5x10^10

a=10^21

where Xo= depletion region width

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Since i'm not given Vbi or Xo, I tried using an iterative method and Vbi and Xo converge at 20.202

I'm not quite sure what to do with this number or which value it pertains to. I would make the assumption that the potential barrier would be around 0.65-0.7V

Can anyone lead me to the right direction? Thanks.

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# Linearly graded pn junctions

Can you offer guidance or do you also need help?

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