N-type semiconductor -- calculate the doping level

[bob0909090909]

Homework Statement

An n-type silicon (Si) is produced by doping with phosphorus (P).

The electrical conductivity measurement of the doped Si shows the charge-carrier concentration to be 3.091 x 1017 cm-3 at room temperature.

Calculate the doping level of P and express your answer in units of gram of P per kilogram of Si.

Relevant Equations

Nothing given

Completely lost on this question. Any help would be great, even a direction to start moving would be helpful.

 

[berkeman]

Welcome to the PF.

What learning resources have you been using on this subject so far? Which textbook, and what additional links and resources?

Can you point out the Relevant Equations in this article at Wikipedia, for example?

https://en.wikipedia.org/wiki/Doping_(semiconductor)