NPN Transistor: Collector Voltage Below Emitter Voltage?

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Discussion Overview

The discussion revolves around the behavior of an NPN transistor when the collector voltage is below the emitter voltage. Participants explore the implications of this configuration, including current flow, internal diode behavior, and operational characteristics. The scope includes theoretical considerations and practical implications of transistor operation.

Discussion Character

  • Exploratory
  • Technical explanation
  • Debate/contested

Main Points Raised

  • One participant questions whether current can flow from the emitter to the collector when the collector voltage is at ground and the emitter voltage is at 2V, given a base voltage of 5V.
  • Another participant suggests that this configuration is not typical for transistor operation and implies that it may be considered as connecting the transistor 'the wrong way up'.
  • A different participant expresses skepticism about having a 3V difference between the base and emitter, noting that such a condition could indicate a defective transistor and discusses the implications of the internal diode structures.
  • Some participants argue that while it is theoretically possible to operate the transistor in this manner, it would result in low current gain (hfe) and is not the intended operational mode.
  • One participant asserts that as long as the base-emitter voltage (Vbe) is greater than 0 and the base-collector voltage (Vbc) is less than 0, the transistor can function in linear mode, despite the unusual voltage configuration.
  • Another participant warns that applying 5V to the base and 2V to the emitter could damage the transistor, emphasizing the importance of maintaining appropriate voltage levels to avoid breakdown.

Areas of Agreement / Disagreement

Participants express differing views on the feasibility and implications of operating an NPN transistor with the collector voltage below the emitter voltage. There is no consensus on the practicality or reliability of this configuration, and multiple competing perspectives remain.

Contextual Notes

Participants highlight potential limitations regarding the assumptions made about voltage levels and the operational characteristics of the transistor. There are unresolved concerns about the breakdown voltages and the reliability of the transistor when operated outside its typical configuration.

scaredcrow
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What happens if a NPN transistor's collector voltage is below its emitter voltage?

Say we have a NPN transistor, and the base voltage is at 5V, the emitter voltage is 2V, and the collector voltage is at ground. Will current flow from the emitter to the collector, or is there an internal diode that blocks this? I ask because I never see this case in my book.
 
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I think that's because they are not designed to operate that way. You would, effectively have connected the transistor the 'wrong way up' and its e would be its c and its c would be its e, with an inappropriate be junction width.
 
I have never heard of 3 volts between the base and emitter of a transistor unless the transistor is defective.

The construction of a transistor is such that there is the equivalent of a forward biased diode between the base and the emitter so it would be very difficult to get more than a volt between base and emitter without destroying the transistor.

There also is the equivalent a diode between base and collector. This diode is reversed biased under normal operation. if you were to bring the collector much more than about a 0.6 volts below the base voltage, you would probably destroy the transistor.
 
scaredcrow said:
What happens if a NPN transistor's collector voltage is below its emitter voltage?

Say we have a NPN transistor, and the base voltage is at 5V, the emitter voltage is 2V, and the collector voltage is at ground. Will current flow from the emitter to the collector, or is there an internal diode that blocks this? I ask because I never see this case in my book.
In principle, it can be operated that way, but it would have a really low hfe. They are made to optimize their operation in only one configuration.
 
scaredcrow said:
What happens if a NPN transistor's collector voltage is below its emitter voltage?

Say we have a NPN transistor, and the base voltage is at 5V, the emitter voltage is 2V, and the collector voltage is at ground. Will current flow from the emitter to the collector, or is there an internal diode that blocks this? I ask because I never see this case in my book.

There's absolutely no reason you couldn't. The only thing that matters is the Vbe and Vbe relative voltages. As long as Vbe>0 and Vbc<0, then you are operation in linear mode and it works like a linear amplifier.

In your case, Vb-Ve = Vbe = 3V, and Vb-Vc = Vbc = -5V, ergo it's in linear. The reality though is that the Vbe voltage is set to 0.7V (in silicon) and the difference in voltage (5V - 0.7V) will be dropped across the Thevenin equivalent voltage of the base bias circuit. If it's a power supply then inside the power supply itself.

The absolute values of voltage never matter in any circuit - it's all only about relative voltages between nodes and across branches.
 
scaredcrow said:
What happens if a NPN transistor's collector voltage is below its emitter voltage?

Say we have a NPN transistor, and the base voltage is at 5V, the emitter voltage is 2V, and the collector voltage is at ground. Will current flow from the emitter to the collector, or is there an internal diode that blocks this? I ask because I never see this case in my book.

You'll never get 5V on the base and 2V on emitter without burning the transistor! Let say if you forward bias the collector by about 0.7V and reverse biased the emitter, I think you'll make the NPN works somewhat like a normal NPN, but the beta is going to be low and not a good transistor. Also, the breakdown voltage of emitter base junction is quite low. We actually use the reverse biased B B junction as zener diode in integrated circuit design. NPN means exactly this...NPN and it should work as transistor if you forward-reverse biased it and keep the B E reverse voltage low enough to prevent it from becoming a zener diode. But the structure of the transistor is designed to work in the normal mode, and it won't be reliable and have good performance if you reverse it.

That's my understanding.
 

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