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(Reverse) Schottky Diode Question

  1. Apr 29, 2012 #1
    Is a reverse Schottky diode possible?

    I understand the basics of the Schotkky barrier/rectifier commonly achieved by a metal/semiconductor interface.

    Recently, it was suggested to me that a "reverse" Schottky junction is possible if the metal is placed against a fully depleted, high carrier concentration semiconductor. Further, this would result in a metal accelerating and reducing recombination of holes for instance in a p-type semiconductor.

    I'm skeptical but lack the physics skills for rebuttal.

    Any help?

    Thanks!
     
  2. jcsd
  3. May 1, 2012 #2
    400 views but no replies?

    Can I explain something better?
     
  4. May 31, 2012 #3
    I don't understand the question. Yes, research Ohmic.

    Otherwise, it sounds like you're suggestion that equilibrium isn't achieved?

    in general; when ever two potential differences exist, then a field results. When the material with their respective valence bands and Fermi energy levels are joined, where a depletion region exists, then the net current due to recombination and even thermal electron flows, is ALWAYS 0,for both p or n type contacts. so holes would accelerate across a depleted region. but there will be not net effect.
     
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