Is a reverse Schottky diode possible? I understand the basics of the Schotkky barrier/rectifier commonly achieved by a metal/semiconductor interface. Recently, it was suggested to me that a "reverse" Schottky junction is possible if the metal is placed against a fully depleted, high carrier concentration semiconductor. Further, this would result in a metal accelerating and reducing recombination of holes for instance in a p-type semiconductor. I'm skeptical but lack the physics skills for rebuttal. Any help? Thanks!