Step PN Junction - Energy Band Diagram

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SUMMARY

The discussion focuses on the analysis of a step pn junction diode fabricated in silicon, with n-side doping concentration of N'D = 2x1016 cm-3 and p-side doping concentration of N'A = 5x1015 cm-3. Participants are tasked with drawing the energy band diagram at equilibrium and calculating the built-in voltage, which should be compared to the measured value from the diagram. The complexity of the question, consisting of nine parts, has led to confusion among participants, particularly in initiating the solution process.

PREREQUISITES
  • Understanding of semiconductor physics, specifically pn junctions
  • Knowledge of energy band diagrams and their significance
  • Familiarity with built-in voltage calculations in semiconductor devices
  • Proficiency in using silicon material properties for electronic applications
NEXT STEPS
  • Study the principles of semiconductor doping and its effects on junction behavior
  • Learn how to construct energy band diagrams for various semiconductor configurations
  • Research built-in voltage calculations for pn junctions using the formula Vbi = (kT/q) ln(N'D/N'A)
  • Explore simulation tools like Silvaco or COMSOL for modeling semiconductor devices
USEFUL FOR

Electrical engineers, semiconductor physicists, and students studying electronic materials who are looking to deepen their understanding of pn junction behavior and energy band analysis.

metroplex
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A step pn junction diode is made in silicon with the n side having N'D = 2x10^16 cm^-3 and the p side having a net doping of N'A = 5x10^15 cm^-3.

1). Draw to scale the energy band diagram of the junction at equilibrium.
2). Find the built-in voltage, and compare with the value measured off your drawing in 1).

There are 9 parts to this question, but I cannot seem to find out how to start it off. I've tried for 3 hours and couldn't make any progress. The other parts are somewhat related.
 
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