What advantages do tri-gate MOSFETs have over FinFETs?

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Tri-gate MOSFETs and FinFETs are essentially the same technology, differing mainly in terminology, with "FinFET" referring to the device's fin-like structure. Tri-gate MOSFETs outperform FinFETs due to superior subthreshold behavior and enhanced gate control over the channel. The increased surface area of the gate contact in tri-gated devices improves capacitance, thereby enhancing gate control. This design allows for better performance in semiconductor applications. For further insights, resources from Prof. C.M. Hu are recommended.
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What is the difference between multi-fin trigate MOSFET and multi-fin FinFET? Why Trigate performs better?
 
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They are generally the same thing. Just different names as trade names.
 
They are the same but people call different names. They call it FinFET because the shape of the device looks like a fin of a fish. I recalled that Prof. C.M Hu from Berkeley prefer tri-gate. (I don't remember clearly). The performance is better because it has a better subtreshold behavior. The gate has more control on the channel. If you are interested, you may go to Prof. C.M Hu to take a look. There should be some materials about trigate MOSFET.
 
FinFET can sometimes refer to a double-gated (side-gated) OR a tri-gated (top and side gated) device. Tri-gated is, as the name says, tri-gated. Tri-gated devices are superior because they have a larger surface area over which the gate contacts. Remember that the gate stack/semiconductor is essentially an M/I/S capacitor. To increase the capacitance, which increases the gate's control over the channel, you want to increase the area over which the capacitor covers.

I suggest this review article: http://www.nature.com/nature/journal/v479/n7373/full/nature10676.html
 
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