Tri-gate MOSFETs and FinFETs are essentially the same technology, differing mainly in terminology, with "FinFET" referring to the device's fin-like structure. Tri-gate MOSFETs outperform FinFETs due to superior subthreshold behavior and enhanced gate control over the channel. The increased surface area of the gate contact in tri-gated devices improves capacitance, thereby enhancing gate control. This design allows for better performance in semiconductor applications. For further insights, resources from Prof. C.M. Hu are recommended.