Minority carriers, such as electrons in p-type materials, persist due to a balance between thermal generation and recombination processes. Even though these carriers recombine with excess holes, they are continuously generated thermally, preventing their concentration from reaching zero. In doped semiconductors, the concentration of minority carriers is significantly reduced but remains measurable. For instance, doping silicon with donor ions increases electron concentration while decreasing hole concentration dramatically. This equilibrium explains the presence of minority carriers in p-type materials despite their tendency to recombine.