Calculating the Thickness of a Doped Silicon Strip with Given Current and Width

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To calculate the thickness of a doped silicon strip, the relevant equation is I = n * e * A * v, where I is the current, n is the electron density, e is the charge of an electron, A is the cross-sectional area, and v is the drift velocity. Given the strip's width of 270 µm, a current of 110 µA, and a drift speed of 44 cm/s, the area can be calculated. The cross-sectional area can be derived from the equation, and to find the thickness, it is necessary to divide the area by the width. This approach effectively links the known variables to determine the strip's thickness. The solution confirms that understanding the relationship between area and thickness is key to solving the problem.
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Homework Statement



A strip of doped silicon 270 µm wide contains 9.1E22 conduction electrons per cubic meter and an insignificant number of holes. When the strip carries a current of 110 µA, the drift speed of the electrons is 44 cm/s. What is the thickness of the strip?


Homework Equations



I=n*e*A*V

Where I is current, n is electrons per volume, A is cross sectional, v is drift velocity

The Attempt at a Solution



I've plugged into the equation above the variables given in the problem and solved for area. But how to find thickness, given the width? I think there's a missing link somewhere.
 
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Think about it: which area is that?
 
It's the surface area of the strip. I've thought about it. I have the width and the surface area but I cannot solve for thickness.
 
No it's the cross sectional area of the strip - does this help you find the thickness?
 
Yes, just divide that by the width. Thanks!
 
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