Does Gate Oxide Breakdown Voltage Vary with Bias Polarity in NMOS Transistors?

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Gate oxide breakdown voltage in NMOS transistors is influenced by bias polarity, with significant differences observed between positive and negative gate biases. Research indicates that time-dependent dielectric breakdown lifetimes are approximately ten times longer under positive bias conditions. Conversely, negative bias leads to faster tunneling effects in the gate oxide. This polarity dependence is critical for understanding the reliability and performance of NMOS devices. Overall, bias polarity plays a crucial role in gate oxide wearout characteristics.
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For a NMOS transistor, is there a difference in gate oxide breakdown voltage if we apply a positive bias on gate and a negative bias on gate? (assume S/D/bulk are ground)
 
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According to the paper
Hokari, Y, "Stress voltage polarity dependence of thermally grown thin gate oxide wearout" IEEE Transactions on Electron Devices, vol. 35, no 8, August 1998

there is a difference. In fact time-dependent dielectric breakdown lifetimes is one order-of-magnitude longer for positive biases and you get tunneling quicker with negative stress.
 

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