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1. Consider a piece of pure silicon 100 mm long with a cross sectional area of 1 mm2.
How much current would flow through this “resistor” at room temperature in response
to an applied voltage of 1 volt?
2. Estimate the resistivity of pure silicon in V cm at (a) room temperature, (b) 77K,
and (c) 1000°C.You may neglect the temperature dependence of the carrier mobility
in making this estimate.
3. a. Show that the minimum conductivity of a semiconductor sample occurs when
b. What is the expression for the minimum conductivity?
c. Is this value greatly different than the value calculated in problem 1.4 for the intrinsic
conductivity?
4. When a Au atom sits on a lattice site in a silicon crystal, it can act as either a donor
or an acceptor. ED and EA levels both exist for the Au and both are close to the middle of the silicon bandgap. If a small concentration of Au is placed in an N-type
silicon crystal, will the Au behave as a donor or an acceptor? Explain.
please post the answers asap if u can solve. Thanx.
How much current would flow through this “resistor” at room temperature in response
to an applied voltage of 1 volt?
2. Estimate the resistivity of pure silicon in V cm at (a) room temperature, (b) 77K,
and (c) 1000°C.You may neglect the temperature dependence of the carrier mobility
in making this estimate.
3. a. Show that the minimum conductivity of a semiconductor sample occurs when
b. What is the expression for the minimum conductivity?
c. Is this value greatly different than the value calculated in problem 1.4 for the intrinsic
conductivity?
4. When a Au atom sits on a lattice site in a silicon crystal, it can act as either a donor
or an acceptor. ED and EA levels both exist for the Au and both are close to the middle of the silicon bandgap. If a small concentration of Au is placed in an N-type
silicon crystal, will the Au behave as a donor or an acceptor? Explain.
please post the answers asap if u can solve. Thanx.