Quantum Well with Infinite Barriers

In summary, the problem involves an electron in a one-dimensional rectangular potential well with barriers of infinite height and a width of 5 nm. The task is to find the wavelengths of photons emitted during electronic transitions from the excited states with quantum numbers n = 2 and n = 3 to the ground state with n = 1. The resulting wavelengths are approximately 1.15 µm and 0.43 µm. The formula for calculating the energy difference between states (ΔE = En+1 − En = (2n + 1)E1) can only be used for neighboring states, so for the jump from n = 2 to n = 1, a different value for n must be used. For
  • #1
beastman
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0

Homework Statement


An electron is in a one-dimensional rectangular potential well
with barriers of infinite height. The width of the well is equal to L = 5 nm.
Find the wavelengths of photons emitted during electronic transitions from the
excited states with quantum numbers n = 2, λ21, and n = 3, λ31, to the ground
state with n = 1. (Answer: λ21 ≈ 1.15 µm and λ31 ≈ 0.43 µm.)

Homework Equations



E1 = (∏^2)*h^2/2meL^2 = 0.3737/L^2 eV

ΔE = En+1 − En = (2n + 1)E1

ε = hf

The Attempt at a Solution



I found the ground state energy to be 0.0149 eV. Then using the ΔE equation for n=2,3 I found the energies of the emitted photons to be 0.0745 eV and 0.1043 eV, respectively.
Using these energies in Plancks formula is getting me the wrong wavelengths, what am I doing wrong?

Please help!
 
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  • #2
beastman said:
ΔE = En+1 − En = (2n + 1)E1

This formula will only work for jumping between two neighboring states. So, it should work for E2-E1. But what value should you use for n in the formula for this case? (It's not n = 2.)

For the jump from the n = 3 to the n = 1 case you might just want to calculate the energies of each state separately and then subtract.
 

1. What is a quantum well with infinite barriers?

A quantum well with infinite barriers is a type of semiconductor structure where a thin layer of one material is sandwiched between two layers of a different material with a higher band gap. The layers act as barriers that confine electrons in the middle layer, creating a potential well. This confinement leads to unique quantum effects and makes quantum wells useful in various electronic and optoelectronic devices.

2. How is a quantum well with infinite barriers created?

A quantum well with infinite barriers can be created through a process called epitaxial growth, where the layers of different materials are deposited on top of each other using techniques such as molecular beam epitaxy or metal-organic chemical vapor deposition. The thickness of the layers is carefully controlled to achieve the desired quantum well properties.

3. What are the properties of a quantum well with infinite barriers?

A quantum well with infinite barriers has a narrow energy band gap in the middle layer, which allows for the confinement of electrons. It also exhibits quantum effects such as quantized energy levels and wave-like behavior of electrons. The size and shape of the quantum well can be manipulated to control these properties and tailor them for specific applications.

4. What are the applications of a quantum well with infinite barriers?

Quantum wells with infinite barriers have various applications in electronic and optoelectronic devices such as transistors, lasers, and photodetectors. The confinement of electrons in these structures allows for faster and more efficient devices compared to traditional materials. They are also used in quantum computing and quantum information processing.

5. What are the challenges in using quantum wells with infinite barriers?

One of the main challenges in using quantum wells with infinite barriers is the precise control and uniformity of the layers during the epitaxial growth process. Any variations or defects in the layers can significantly affect the properties of the quantum well. Another challenge is the fabrication of devices with these structures, which requires specialized techniques and equipment.

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