What is the electron concentration in a p-doped semiconductor?

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The discussion revolves around calculating electron concentration in a p-doped semiconductor with an intrinsic carrier concentration of 5.6 x 10^14 m^-3 at 300K and an acceptor concentration of Na = 3.9 x 10^18 m^-3. Initially, there is confusion about the necessity of the energy band gap value for the calculation. Participants clarify that a simple equation suffices for determining the electron concentration without needing the band gap. Ultimately, the original poster successfully resolves the question independently. The thread highlights the importance of understanding basic semiconductor equations in doping scenarios.
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A semiconductor material has an intrinsic carrier concentration of 5.6 x 10^14 m^-3 at 300K.
What is the electron concentration when such a semiconductor is p doped with an acceptor concentration Na = 3.9 x 10^18 m-3.

I have no idea how to approach this question without a value for the energy band gap. Could someone point me in the right direction? Thanks.
 
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Why do you need the value of Eg for this question? You only need a simple equation for this question.
 
Defennder said:
Why do you need the value of Eg for this question? You only need a simple equation for this question.

Thanks for the boost in confidence, I've worked it out now anyway.
 
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