Band diagram of intrinsic semiconductors

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Discussion Overview

The discussion revolves around how to sketch the band diagram of intrinsic semiconductors, specifically including the Fermi level in the presence of a uniform electric field versus distance. The topic encompasses theoretical aspects of semiconductor physics and the implications of electric fields on energy band structures.

Discussion Character

  • Exploratory
  • Technical explanation
  • Debate/contested
  • Mathematical reasoning

Main Points Raised

  • Some participants express confusion about the original question, indicating it lacks clarity regarding the specifics of the electric field and its effects on the band diagram.
  • One participant describes the energy band diagram of intrinsic semiconductors, noting that the Fermi level lies between the conduction and valence bands.
  • Another participant suggests that the question may pertain to the bending of energy bands due to an applied electric field, recommending a search for "band bending" diagrams.
  • A participant explains that if the electric field is constant, the energy bands will be linear in position, providing a mathematical relationship between electric potential and energy bands.
  • Further contributions detail how to sketch the energy band diagram, emphasizing the need to represent the conduction and valence bands with a specific slope related to the electric field and the quasi Fermi level under non-equilibrium conditions.
  • Participants discuss the importance of knowing the boundary conditions of the semiconductor device to accurately depict the Fermi level and the effects of the applied voltage.
  • One participant questions the necessity of the slope of -qE, leading to further elaboration on the relationship between energy and electric field in the context of the band diagram.

Areas of Agreement / Disagreement

Participants do not reach a consensus on the clarity of the original question or the specifics of the band diagram sketching process. Multiple viewpoints regarding the interpretation of the electric field's effects and the necessary details for the sketch remain evident.

Contextual Notes

Participants express uncertainty about the exact nature of the electric field and its application, as well as the implications of boundary conditions on the band diagram. There are unresolved aspects regarding the assumptions made in the mathematical relationships presented.

shaikss
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How to sketch the band diagram of intrinsic semiconductors including the fermi level with the electric field present verses distance? Its not a homework question.
 
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Er.. your question is very vague. What exactly do you not know? A search on the energy band diagram of intrinsic semiconductor would have given you plenty of results. Did you try it? If you did, where exactly are you having difficulties?

And what "electric field"?

Zz.
 
ZapperZ said:
Er.. your question is very vague. What exactly do you not know? A search on the energy band diagram of intrinsic semiconductor would have given you plenty of results. Did you try it? If you did, where exactly are you having difficulties?

And what "electric field"?

Zz.

Zapper,

I know the energy band diagram of intrinsic semiconductor where Fermi energy level lies in the middle of conduction band and valence band. If we consider that characterstics, its the graph which is plotted w.r.t energy.

What I have asked is to sketch the energy band diagram of intrinsic semiconductor which includes fermi level with uniform electric field verses distance.

I googled but I didn't found the relevant sketch.

Thanks!
 
shaikss said:
Zapper,

I know the energy band diagram of intrinsic semiconductor where Fermi energy level lies in the middle of conduction band and valence band. If we consider that characterstics, its the graph which is plotted w.r.t energy.

What I have asked is to sketch the energy band diagram of intrinsic semiconductor which includes fermi level with uniform electric field verses distance.

I googled but I didn't found the relevant sketch.

Thanks!

I can only guess at what you are asking, because you are still not explaining it clearly.

Are you asking for the situation where a perpendicular electric field is applied to the surface of the semiconductor, and you want the effect on the semiconductor bands due to this external field from the surface and into the bulk of the material?

If it is, then you should be searching for "bend bending" diagram.

Zz.
 
ZapperZ said:
I can only guess at what you are asking, because you are still not explaining it clearly.

Are you asking for the situation where a perpendicular electric field is applied to the surface of the semiconductor, and you want the effect on the semiconductor bands due to this external field from the surface and into the bulk of the material?

If it is, then you should be searching for "bend bending" diagram.

Zz.

please clarify me with respect to your second question.
The question i have posed was asked in an iit interview.
But i still do not find the answer
 
shaikss said:
please clarify me with respect to your second question.
The question i have posed was asked in an iit interview.
But i still do not find the answer

This is getting sillier. Now it is *I* who have to clarify what I thought you were asking?

1. Uniform E-field. I assume you know what that means.

2. Surface of semiconductor is perpendicular to this uniform E-field. Again, I assume you know what this is.

3. E-field affects the bands in the semiconductor. OK so far?

4. Is this what you are asking?

I think if I don't get a definite answer to what you are asking after this, I'm done.

Zz.
 
The energy bands are related to the electric potential through E=q*V where E is the energy, q the electron charge. If your Electric field E_{field} is constant through the device, then your potential, and thus your energy Bands will be linear in position. That is qV=-q\int^x_0 E_{field} dx'=-qE_{field}x=E_c + Const. where E_c is your conduction band, and the valence band is just E_v=E_c-E_g where E_g is the bandgap. So, just draw a straight line with a slope -qE_{field} to get the shape of your bands with respect to position in your semiconductor.
 
Let me pose the Question in this way:

Sketch the energy band diagram (E versus x) including Fermi level of an intrinsic semiconductor under uniform electric field in x-direction.
 
Just draw to lines )one for conduction band, one with the valence band)with a slope -qEfield, separated by a distance Eg. Then, since for an intrinsic case, the fermi level Ef is almost nearly right at the midgap, just draw a dotted line in between your bands with the same slope. You have to be careful though, since this is a quasi fermi level. By definition, when you apply a voltage (and hence create an Efield) you are taking the system out of equilibrium and putting it into a steady state. So, to get an exact answer, we need to know what is on either side of your device (n+p junction, metal-semiconductor interface, oxide and semiconductor interface, etc.). Then you would draw a constant fermi level at you boundries, and the difference in the two sides of your device wll give you the applied voltage time q (or -q*d*Efield, where d is the total depth or length of your device).
 
  • #10
cbetanco said:
Just draw to lines )one for conduction band, one with the valence band)with a slope -qEfield, separated by a distance Eg. Then, since for an intrinsic case, the fermi level Ef is almost nearly right at the midgap, just draw a dotted line in between your bands with the same slope. You have to be careful though, since this is a quasi fermi level. By definition, when you apply a voltage (and hence create an Efield) you are taking the system out of equilibrium and putting it into a steady state. So, to get an exact answer, we need to know what is on either side of your device (n+p junction, metal-semiconductor interface, oxide and semiconductor interface, etc.). Then you would draw a constant fermi level at you boundries, and the difference in the two sides of your device wll give you the applied voltage time q (or -q*d*Efield, where d is the total depth or length of your device).

Why the slope of -qE is required?
 
  • #11
shaikss said:
Why the slope of -qE is required?

Because the Energy of the bands is equal to qV+Const.. So, the conduction band for example is E_c=qV+Const.=-q\int_0^x E_{field} dx'+Const.=-qE_{field}x+Const. for a constant electric field, which I have denoted by E_{field}. The Valence band is just taken by E_v=E_c-E_g=-qE_{field}x -E_g+Const. where E_g is just the bandgap energy. So the slope of the bands is -qE_{field}
 

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