Delocalization of states in valence band du to doping

In summary, the conversation discusses the concept of delocalization of states in semiconductors and the different types of localization. The use of the envelope wave function can result in an energy spectrum similar to that of a hydrogen atom, with an effective Bohr radius of about 5nm. This is significantly larger than the original Bohr radius, and it is influenced by factors such as the energy of the conduction band and the effective mass of an electron. The idea behind this is that when a semiconductor is doped, the extra hole is not held in a specific location, but rather by the potential of the doping atom.
  • #1
abid
3
0
How delocalization of the states in the valence band occurs. Can somebody explain how many kinds of localization of states are there in semiconductors.
 
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  • #2
If you use the envelope wave function, you get an H-atom like energy spectrum (e.g. for n-doping):
[tex]
E_D(n) = E_C+\frac{m*}{c^2 m}E_H = E_C - 13.6 eV \frac{m*}{j^2c^2m}[/tex]
where Ec is the energy of the conduction band, m* the effective mass of an electron, and j an integer.
From that, you get an effective Bohr radius of about 5nm, which is two orders of magnitude larger than a0.
 
  • #3
i could not understand it much though i get the idea of spread in band due to 5nm
 
  • #4
The idea behind it is:
Before it gets doped, the semiconductor is perfectly happy with its electron distribution. Then it gets, e.g., p-doped. Nothing holds the extra hole anywhere except for the potential of the doping atom, so you can calculate its effective Bohr radius as said above, taking all the potentials into account.
 

Related to Delocalization of states in valence band du to doping

1. What is delocalization of states in the valence band?

Delocalization of states in the valence band refers to the movement of electrons in the valence band of a semiconductor material due to doping. Doping is the intentional introduction of impurities into a material to change its electrical properties. When these impurities, also known as dopants, are added to a semiconductor material, they can cause the electrons in the valence band to become delocalized and move throughout the material.

2. How does doping affect the delocalization of states in the valence band?

Doping introduces additional energy levels into the valence band, creating a wider range of energy states for electrons to occupy. This leads to an increase in the number of delocalized electrons in the valence band, making the material more conductive. The type and amount of dopant used can also affect the degree of delocalization and the resulting electrical properties of the material.

3. What role does delocalization of states play in semiconductor devices?

Delocalization of states is crucial in the operation of semiconductor devices such as transistors and diodes. By controlling the delocalization of electrons in the valence band through doping, the electrical properties of the device can be manipulated. This allows for the creation of devices with specific functions, such as amplification or switching.

4. Can delocalization of states be controlled?

Yes, delocalization of states can be controlled through the careful selection and introduction of dopants. Different dopants have varying effects on the delocalization of electrons, and the amount of dopant used can also impact the degree of delocalization. This allows for precise control over the electrical properties of a semiconductor material.

5. How does delocalization of states affect the overall performance of a semiconductor material?

The delocalization of states plays a crucial role in the performance of a semiconductor material. By controlling the movement of electrons in the valence band, the material's conductivity and other electrical properties can be manipulated. This allows for the creation of high-performance semiconductor devices used in a wide range of applications, such as electronics, solar cells, and optoelectronics.

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