Optical gain peak, PL peak and EL peak: are they same/different

[jam_27]

I need to understand if Optical-gain peak, (Photoluminescence) PL peak and the Electroluminescence (EL) peak are they same or different. If they are the same/different what the corresponding conditions?

Would be easier for me if bulk GaAs is used for the explanation (comparison at same temperature). Ultimately I would like to understand this for QW (say AlGaAs/GaAs).

Any reference which explains this would be useful.

Thanks.

 

[BigJDubs]

Optical-gain peak, Photoluminescence (PL) peak and Electroluminescence (EL) peak are all different. Optical gain peak is the peak of the optical gain spectrum of a material which is related to its refractive index and is measured by using a Fabry-Perot interferometer. Photoluminescence (PL) peak is the emission peak of light that occurs when a material is excited by an external stimulus such as an electric field or photon. This is usually measured using a spectrometer. Electroluminescence (EL) peak is the emission peak of light that occurs when a material is excited by an electric current. This is typically measured using a photodiode. For bulk GaAs, the optical gain peak, PL peak and EL peak occur at different wavelengths depending on the temperature. As temperature increases, the optical gain peak shifts to longer wavelengths while the PL peak and EL peak shift to shorter wavelengths. For quantum wells (QW) such as AlGaAs/GaAs, the optical gain peak, PL peak and EL peak will also occur at different wavelengths depending on the temperature and the properties of the quantum well structure.