I got this assignment and I am stuck on one question, I just need a few pointers or websites with information. Discuss the effects of altering the gate dimenstions in the MOS devices and the geometry of the bipolar transistors used. I don't need mad calculations or complex answers, just a basic explanation, any help will be greatly appreciated. Thank you. EDIT:: Sorry another thing, am I correct in saying (Just checking another part of the assingment is correct) that Etching is used in small scale integrated circuits and that Diffusion and Ion Implantation is used in large scale integrated circuits?